IRLSZ34A Datasheet. Specs and Replacement

Type Designator: IRLSZ34A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 334 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm

Package: TO220F

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IRLSZ34A datasheet

 ..1. Size:219K  samsung
 irlsz34a.pdf pdf_icon

IRLSZ34A

IRLSZ34A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic Level Gate Drive RDS(on) = 0.046 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 20 A Lower Input Capacitance Improved Gate Charge TO-220F Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.033 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute ... See More ⇒

 9.1. Size:215K  samsung
 irlsz14a.pdf pdf_icon

IRLSZ34A

IRLSZ14A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic Level Gate Drive RDS(on) = 0.155 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate Charge TO-220F Extended Safe Operating Area A (Max.) @ VDS = 60V Lower Leakage Current 10 Lower RDS(ON) 0.122 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolut... See More ⇒

 9.2. Size:218K  samsung
 irlsz24a.pdf pdf_icon

IRLSZ34A

IRLSZ24A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic Level Gate Drive RDS(on) = 0.075 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 14 A Lower Input Capacitance Improved Gate Charge TO-220F Extended Safe Operating Area A (Max.) @ VDS = 60V Lower Leakage Current 10 Lower RDS(ON) 0.061 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolut... See More ⇒

 9.3. Size:221K  samsung
 irlsz44a.pdf pdf_icon

IRLSZ34A

IRLSZ44A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic Level Gate Drive RDS(on) = 0.025 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 30 A Lower Input Capacitance Improved Gate Charge TO-220F Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.02 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute M... See More ⇒

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Detailed specifications: IRLS530A, IRLS540A, IRLS610A, IRLS620A, IRLS630A, IRLS640A, IRLSZ14A, IRLSZ24A, 7N60, IRLSZ44A, IRLU010, IRLU014, IRLU014A, IRLU020, IRLU024, IRLU024A, IRLU024N

Keywords - IRLSZ34A MOSFET specs

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