IRLSZ34A PDF and Equivalents Search

 

IRLSZ34A PDF Specs and Replacement


   Type Designator: IRLSZ34A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   Qg ⓘ - Total Gate Charge: 27 nC
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 334 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: TO220F
 

 IRLSZ34A substitution

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IRLSZ34A PDF Specs

 ..1. Size:219K  samsung
 irlsz34a.pdf pdf_icon

IRLSZ34A

IRLSZ34A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic Level Gate Drive RDS(on) = 0.046 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 20 A Lower Input Capacitance Improved Gate Charge TO-220F Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.033 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute ... See More ⇒

 9.1. Size:215K  samsung
 irlsz14a.pdf pdf_icon

IRLSZ34A

IRLSZ14A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic Level Gate Drive RDS(on) = 0.155 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate Charge TO-220F Extended Safe Operating Area A (Max.) @ VDS = 60V Lower Leakage Current 10 Lower RDS(ON) 0.122 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolut... See More ⇒

 9.2. Size:218K  samsung
 irlsz24a.pdf pdf_icon

IRLSZ34A

IRLSZ24A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic Level Gate Drive RDS(on) = 0.075 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 14 A Lower Input Capacitance Improved Gate Charge TO-220F Extended Safe Operating Area A (Max.) @ VDS = 60V Lower Leakage Current 10 Lower RDS(ON) 0.061 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolut... See More ⇒

 9.3. Size:221K  samsung
 irlsz44a.pdf pdf_icon

IRLSZ34A

IRLSZ44A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic Level Gate Drive RDS(on) = 0.025 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 30 A Lower Input Capacitance Improved Gate Charge TO-220F Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.02 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute M... See More ⇒

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Detailed specifications: IRLS530A , IRLS540A , IRLS610A , IRLS620A , IRLS630A , IRLS640A , IRLSZ14A , IRLSZ24A , 7N60 , IRLSZ44A , IRLU010 , IRLU014 , IRLU014A , IRLU020 , IRLU024 , IRLU024A , IRLU024N .

Keywords - IRLSZ34A MOSFET specs

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