All MOSFET. AFN4998W Datasheet

 

AFN4998W Datasheet and Replacement


   Type Designator: AFN4998W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOP-8P
 

 AFN4998W substitution

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AFN4998W Datasheet (PDF)

 ..1. Size:583K  alfa-mos
 afn4998w.pdf pdf_icon

AFN4998W

AFN4998W Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4998W, N-Channel enhancement mode 100V/5.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/4.2A,RDS(ON)=130m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit

 7.1. Size:582K  alfa-mos
 afn4998.pdf pdf_icon

AFN4998W

AFN4998 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4998, N-Channel enhancement mode 100V/5.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/4.2A,RDS(ON)=145m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 8.1. Size:574K  alfa-mos
 afn4996.pdf pdf_icon

AFN4998W

AFN4996 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4996, N-Channel enhancement mode 90V/7.6A,RDS(ON)=68m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/6.8A,RDS(ON)=75m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 8.2. Size:575K  alfa-mos
 afn4997.pdf pdf_icon

AFN4998W

AFN4997 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4997, N-Channel enhancement mode 90V/6.8A,RDS(ON)=68m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/5.6A,RDS(ON)=75m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

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Datasheet: AFN4936S , AFN4936WS , AFN4946 , AFN4946BW , AFN4946W , AFN4996 , AFN4997 , AFN4998 , IRFB4110 , AFN5004S , AFN501DEA , AFN5800 , AFN5800W , AFN5808W , AFN5904W , AFN5908W , AFN6011S .

History: CHM1012TGP | TPC8203 | CS12N60FA9H | AP3403GH | IPD380P06NM | IRFS340B | IPB100N04S2L-03

Keywords - AFN4998W MOSFET datasheet

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