All MOSFET. AFN501DEA Datasheet

 

AFN501DEA Datasheet and Replacement


   Type Designator: AFN501DEA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.03 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 9.1 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 700 Ohm
   Package: SOT-23
 

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AFN501DEA Datasheet (PDF)

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AFN501DEA

AFN501DEA Alfa-MOS 600V N-Channel Technology Depletion Mode Power MOSFET General Description Features AFN501DEA is an N-channel depletion-mode 600V/16mA,RDS(ON)=700@VGS=10V Power MOSEFT which is produced using 600V/3mA,RDS(ON)=700@VGS=4.5V VDMOS technology. The improved planar stripe Depletion-mode ( Normally-on) cell have been especially tailored to minimize

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AFN501DEA

AFN5004S Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5004S, N-Channel enhancement mode 40V/20A,RDS(ON)= 5.5m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/15A,RDS(ON)= 6.5m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

Datasheet: AFN4946 , AFN4946BW , AFN4946W , AFN4996 , AFN4997 , AFN4998 , AFN4998W , AFN5004S , IRF9540 , AFN5800 , AFN5800W , AFN5808W , AFN5904W , AFN5908W , AFN6011S , AFN6018S , AFN6202S .

History: STL38N65M5 | AM4424N | BSC090N03LSG | APT6021BLLG | MPSP65M170 | PT530BA | DHB9Z24

Keywords - AFN501DEA MOSFET datasheet

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