AFN501DEA Datasheet. Specs and Replacement
Type Designator: AFN501DEA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.03 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 9.1 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 700 Ohm
Package: SOT-23
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AFN501DEA datasheet
afn501dea.pdf
AFN501DEA Alfa-MOS 600V N-Channel Technology Depletion Mode Power MOSFET General Description Features AFN501DEA is an N-channel depletion-mode 600V/16mA,RDS(ON)=700 @VGS=10V Power MOSEFT which is produced using 600V/3mA,RDS(ON)=700 @VGS=4.5V VDMOS technology. The improved planar stripe Depletion-mode ( Normally-on) cell have been especially tailored to minimize ... See More ⇒
afn5004s.pdf
AFN5004S Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5004S, N-Channel enhancement mode 40V/20A,RDS(ON)= 5.5m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/15A,RDS(ON)= 6.5m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited ... See More ⇒
Detailed specifications: AFN4946, AFN4946BW, AFN4946W, AFN4996, AFN4997, AFN4998, AFN4998W, AFN5004S, 2N7000, AFN5800, AFN5800W, AFN5808W, AFN5904W, AFN5908W, AFN6011S, AFN6018S, AFN6202S
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