AFN5904W Datasheet. Specs and Replacement
Type Designator: AFN5904W 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 6.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 115 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: DFN3X2
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AFN5904W datasheet
afn5904w.pdf
AFN5904W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5904W, N-Channel enhancement mode 20V/4.5A,RDS(ON)=50m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.6A,RDS(ON)=60m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=78m @VGS=1.8V These devices are particularly suited for low Su... See More ⇒
afn5908w.pdf
AFN5908W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5908W, N-Channel enhancement mode 20V/6.2A,RDS(ON)=30m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.6A,RDS(ON)=35m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.8A,RDS(ON)=45m @VGS=1.8V These devices are particularly suited for low Su... See More ⇒
Detailed specifications: AFN4997, AFN4998, AFN4998W, AFN5004S, AFN501DEA, AFN5800, AFN5800W, AFN5808W, IRFP250N, AFN5908W, AFN6011S, AFN6018S, AFN6202S, AFN6424S, AFN6520S, AFN6530S, AFN6561
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