All MOSFET. AFN5908W Datasheet

 

AFN5908W Datasheet and Replacement


   Type Designator: AFN5908W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: DFN3X2
 

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AFN5908W Datasheet (PDF)

 ..1. Size:710K  alfa-mos
 afn5908w.pdf pdf_icon

AFN5908W

AFN5908W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5908W, N-Channel enhancement mode 20V/6.2A,RDS(ON)=30m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.6A,RDS(ON)=35m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.8A,RDS(ON)=45m@VGS=1.8V These devices are particularly suited for low Su

 8.1. Size:727K  alfa-mos
 afn5904w.pdf pdf_icon

AFN5908W

AFN5904W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5904W, N-Channel enhancement mode 20V/4.5A,RDS(ON)=50m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.6A,RDS(ON)=60m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=78m@VGS=1.8V These devices are particularly suited for low Su

Datasheet: AFN4998 , AFN4998W , AFN5004S , AFN501DEA , AFN5800 , AFN5800W , AFN5808W , AFN5904W , 7N65 , AFN6011S , AFN6018S , AFN6202S , AFN6424S , AFN6520S , AFN6530S , AFN6561 , AFN6562 .

History: BRF2N65 | AOLF66610 | TPCS8303 | IPB80N08S2L-07 | NTMS4503N | 2SK812 | SI2101

Keywords - AFN5908W MOSFET datasheet

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