All MOSFET. AFN6018S Datasheet

 

AFN6018S MOSFET. Datasheet pdf. Equivalent


   Type Designator: AFN6018S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 95 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO-220

 AFN6018S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AFN6018S Datasheet (PDF)

 ..1. Size:560K  alfa-mos
 afn6018s.pdf

AFN6018S AFN6018S

AFN6018S Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6018S, N-Channel enhancement mode 60V/25A,RDS(ON)= 17m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/15A,RDS(ON)= 37m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

 8.1. Size:551K  alfa-mos
 afn6011s.pdf

AFN6018S AFN6018S

AFN6011S Alfa-MOS 65V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6011S, N-Channel enhancement mode 65V/40A, RDS(on)= 7.8m@VGS=10V MOSFET, uses Advanced Trench Technology to 65V/20A, RDS(on)=10m@VGS=6.0V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited fo

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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