AFN7472S MOSFET Datasheet: N-Ch, 30V, 15A. Full specification with pinout and replacement list

AFN7472S Specs and Replacement

   Type Designator: AFN7472S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 3.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm
   Package: DFN3.3X3.3-8L

AFN7472S substitution

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AFN7472S datasheet

..1. Size:500K alfa-mos
afn7472s.pdf pdf_icon

AFN7472S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7472S, N-Channel enhancement mode 30V/15A,RDS(ON)=8.6m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/13A,RDS(ON)=14m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for... See More ⇒

9.1. Size:583K alfa-mos
afn7420.pdf pdf_icon

AFN7420 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7420, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.6A,RDS(ON)=70m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒

9.2. Size:553K alfa-mos
afn7412.pdf pdf_icon

AFN7412 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7412, N-Channel enhancement mode 20V/3.8A,RDS(ON)=52m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=56m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=68m @VGS=1.8V These devices are particularly suited for low Supe... See More ⇒

9.3. Size:573K alfa-mos
afn7402.pdf pdf_icon

AFN7402 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7402, N-Channel enhancement mode 20V/3.6A,RDS(ON)=60m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=70m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=90m @VGS=1.8V These devices are particularly suited for low Supe... See More ⇒