All MOSFET. AFN7472S Datasheet

 

AFN7472S Datasheet and Replacement


   Type Designator: AFN7472S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm
   Package: DFN3.3X3.3-8L
 

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AFN7472S Datasheet (PDF)

 ..1. Size:500K  alfa-mos
 afn7472s.pdf pdf_icon

AFN7472S

AFN7472S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7472S, N-Channel enhancement mode 30V/15A,RDS(ON)=8.6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/13A,RDS(ON)=14m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.1. Size:583K  alfa-mos
 afn7420.pdf pdf_icon

AFN7472S

AFN7420 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7420, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.6A,RDS(ON)=70m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.2. Size:553K  alfa-mos
 afn7412.pdf pdf_icon

AFN7472S

AFN7412 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7412, N-Channel enhancement mode 20V/3.8A,RDS(ON)=52m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=56m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=68m@VGS=1.8V These devices are particularly suited for low Supe

 9.3. Size:573K  alfa-mos
 afn7402.pdf pdf_icon

AFN7472S

AFN7402 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7402, N-Channel enhancement mode 20V/3.6A,RDS(ON)=60m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=70m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=90m@VGS=1.8V These devices are particularly suited for low Supe

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Datasheet: AFN7002DS , AFN7002KAS , AFN7106S , AFN7400 , AFN7402 , AFN7412 , AFN7420 , AFN7424S , IRF530 , AFN8205 , AFN8411 , AFN8412 , AFN8439 , AFN8471 , AFN8495 , AFN8816 , AFN8822 .

History: NCEAP40T11G | PD1503BV | HTJ350N03

Keywords - AFN7472S MOSFET datasheet

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