AFN7472S Datasheet. Specs and Replacement

Type Designator: AFN7472S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm

Package: DFN3.3X3.3-8L

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AFN7472S datasheet

 ..1. Size:500K  alfa-mos
 afn7472s.pdf pdf_icon

AFN7472S

AFN7472S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7472S, N-Channel enhancement mode 30V/15A,RDS(ON)=8.6m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/13A,RDS(ON)=14m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for... See More ⇒

 9.1. Size:583K  alfa-mos
 afn7420.pdf pdf_icon

AFN7472S

AFN7420 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7420, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.6A,RDS(ON)=70m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒

 9.2. Size:553K  alfa-mos
 afn7412.pdf pdf_icon

AFN7472S

AFN7412 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7412, N-Channel enhancement mode 20V/3.8A,RDS(ON)=52m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=56m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=68m @VGS=1.8V These devices are particularly suited for low Supe... See More ⇒

 9.3. Size:573K  alfa-mos
 afn7402.pdf pdf_icon

AFN7472S

AFN7402 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7402, N-Channel enhancement mode 20V/3.6A,RDS(ON)=60m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=70m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=90m @VGS=1.8V These devices are particularly suited for low Supe... See More ⇒

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Detailed specifications: AFN7002DS, AFN7002KAS, AFN7106S, AFN7400, AFN7402, AFN7412, AFN7420, AFN7424S, IRFB3607, AFN8205, AFN8411, AFN8412, AFN8439, AFN8471, AFN8495, AFN8816, AFN8822

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