AFN8471 Datasheet. Specs and Replacement

Type Designator: AFN8471  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm

Package: SOT-223

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AFN8471 datasheet

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AFN8471

AFN8471 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8471, N-Channel enhancement mode 60V/5.8A,RDS(ON)=54m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/4.6A,RDS(ON)=60m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒

 9.1. Size:551K  alfa-mos
 afn8412.pdf pdf_icon

AFN8471

AFN8412 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8412, N-Channel enhancement mode 100V/3.6A,RDS(ON)=300m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.0A,RDS(ON)=310m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited... See More ⇒

 9.2. Size:584K  alfa-mos
 afn8439.pdf pdf_icon

AFN8471

AFN8439 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8439, N-Channel enhancement mode 30V/6.0A,RDS(ON)=45m @VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/5.5A,RDS(ON)=55m @VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for... See More ⇒

 9.3. Size:585K  alfa-mos
 afn8495.pdf pdf_icon

AFN8471

AFN8459 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8459, N-Channel enhancement mode 30V/6.0A,RDS(ON)=44m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.5A,RDS(ON)=50m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒

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Detailed specifications: AFN7412, AFN7420, AFN7424S, AFN7472S, AFN8205, AFN8411, AFN8412, AFN8439, NCEP15T14, AFN8495, AFN8816, AFN8822, AFN8822S, AFN8832, AFN8904, AFN8918, AFN8936

Keywords - AFN8471 MOSFET specs

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