Справочник MOSFET. AFN8471

 

AFN8471 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AFN8471
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 85 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.054 Ohm
   Тип корпуса: SOT-223
 

 Аналог (замена) для AFN8471

   - подбор ⓘ MOSFET транзистора по параметрам

 

AFN8471 Datasheet (PDF)

 ..1. Size:594K  alfa-mos
 afn8471.pdf pdf_icon

AFN8471

AFN8471 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8471, N-Channel enhancement mode 60V/5.8A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/4.6A,RDS(ON)=60m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.1. Size:551K  alfa-mos
 afn8412.pdf pdf_icon

AFN8471

AFN8412 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8412, N-Channel enhancement mode 100V/3.6A,RDS(ON)=300m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.0A,RDS(ON)=310m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.2. Size:584K  alfa-mos
 afn8439.pdf pdf_icon

AFN8471

AFN8439 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8439, N-Channel enhancement mode 30V/6.0A,RDS(ON)=45m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/5.5A,RDS(ON)=55m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.3. Size:585K  alfa-mos
 afn8495.pdf pdf_icon

AFN8471

AFN8459 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8459, N-Channel enhancement mode 30V/6.0A,RDS(ON)=44m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.5A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

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