AFN8816 Datasheet. Specs and Replacement

Type Designator: AFN8816  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: TSSOP-8P

  📄📄 Copy 

AFN8816 substitution

- MOSFET ⓘ Cross-Reference Search

 

AFN8816 datasheet

 ..1. Size:586K  alfa-mos
 afn8816.pdf pdf_icon

AFN8816

AFN8816 Alfa-MOS 30V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8816, N-Channel enhancement mode 30V/8A,RDS(ON)=21m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/5A,RDS(ON)=24m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/4A,RDS(ON)=27m @VGS=2.5V These devices are particularly suited for low ... See More ⇒

 9.1. Size:691K  alfa-mos
 afn8822s.pdf pdf_icon

AFN8816

AFN8822S Alfa-MOS 20V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8822S, N-Channel enhancement mode 20V/6.5A,RDS(ON)=32m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=35m @VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particul... See More ⇒

 9.2. Size:691K  alfa-mos
 afn8822.pdf pdf_icon

AFN8816

AFN8822 Alfa-MOS 20V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8822, N-Channel enhancement mode 20V/7.2A,RDS(ON)=28m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=32m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m @VGS=1.8V These devices are particularly suited fo... See More ⇒

 9.3. Size:685K  alfa-mos
 afn8832.pdf pdf_icon

AFN8816

AFN8832 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8832, N-Channel enhancement mode 20V/5.4A,RDS(ON)=28m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.0A,RDS(ON)=32m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m @VGS=1.8V These devices are particularly suited for low Supe... See More ⇒

SHOW MORE

Detailed specifications: AFN7424S, AFN7472S, AFN8205, AFN8411, AFN8412, AFN8439, AFN8471, AFN8495, STP80NF70, AFN8822, AFN8822S, AFN8832, AFN8904, AFN8918, AFN8936, AFN8968, AFN8987

Keywords - AFN8816 MOSFET specs

 AFN8816 cross reference

 AFN8816 equivalent finder

 AFN8816 pdf lookup

 AFN8816 substitution

 AFN8816 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility