All MOSFET. AFN8936 Datasheet

 

AFN8936 Datasheet and Replacement


   Type Designator: AFN8936
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: SOT-89
      - MOSFET Cross-Reference Search

 

AFN8936 Datasheet (PDF)

 ..1. Size:713K  alfa-mos
afn8936.pdf pdf_icon

AFN8936

AFN8936 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8936, N-Channel enhancement mode 60V/4.6A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.6A,RDS(ON)=54m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 60V/2.0A,RDS(ON)=95m@VGS=3.3V These devices are particularly suited for low Super

 9.1. Size:694K  alfa-mos
afn8988.pdf pdf_icon

AFN8936

AFN8988 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.2. Size:688K  alfa-mos
afn8918.pdf pdf_icon

AFN8936

AFN8918 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8918, N-Channel enhancement mode 40V/4.6A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/3.6A,RDS(ON)=54m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.3. Size:397K  alfa-mos
afn8987.pdf pdf_icon

AFN8936

AFN8987 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8987, N-Channel enhancement mode 90V/2.3A,RDS(ON)=310m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/1.8A,RDS(ON)=320m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HCD60R900 | 2SJ646 | KIA4750S-220 | NDB610B | SI7850DP | NTTFS4C06N | 2SK809

Keywords - AFN8936 MOSFET datasheet

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