All MOSFET. AFN8936 Datasheet

 

AFN8936 Datasheet and Replacement


   Type Designator: AFN8936
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: SOT-89
 

 AFN8936 substitution

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AFN8936 Datasheet (PDF)

 ..1. Size:713K  alfa-mos
 afn8936.pdf pdf_icon

AFN8936

AFN8936 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8936, N-Channel enhancement mode 60V/4.6A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.6A,RDS(ON)=54m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 60V/2.0A,RDS(ON)=95m@VGS=3.3V These devices are particularly suited for low Super

 9.1. Size:694K  alfa-mos
 afn8988.pdf pdf_icon

AFN8936

AFN8988 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.2. Size:688K  alfa-mos
 afn8918.pdf pdf_icon

AFN8936

AFN8918 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8918, N-Channel enhancement mode 40V/4.6A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/3.6A,RDS(ON)=54m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.3. Size:397K  alfa-mos
 afn8987.pdf pdf_icon

AFN8936

AFN8987 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8987, N-Channel enhancement mode 90V/2.3A,RDS(ON)=310m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/1.8A,RDS(ON)=320m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

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Datasheet: AFN8471 , AFN8495 , AFN8816 , AFN8822 , AFN8822S , AFN8832 , AFN8904 , AFN8918 , STF13NM60N , AFN8968 , AFN8987 , AFN8987W , AFN8988 , AFN8988W , AFN9530 , AFN9910 , AFN9971 .

History: STW60N65M5

Keywords - AFN8936 MOSFET datasheet

 AFN8936 cross reference
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