AFN8936 MOSFET. Datasheet pdf. Equivalent
Type Designator: AFN8936
Marking Code: 36*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 4.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 85 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: SOT-89
AFN8936 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AFN8936 Datasheet (PDF)
afn8936.pdf
AFN8936 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8936, N-Channel enhancement mode 60V/4.6A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.6A,RDS(ON)=54m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 60V/2.0A,RDS(ON)=95m@VGS=3.3V These devices are particularly suited for low Super
afn8988.pdf
AFN8988 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
afn8918.pdf
AFN8918 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8918, N-Channel enhancement mode 40V/4.6A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/3.6A,RDS(ON)=54m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
afn8987.pdf
AFN8987 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8987, N-Channel enhancement mode 90V/2.3A,RDS(ON)=310m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/1.8A,RDS(ON)=320m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
afn8987w.pdf
AFN8987W Alfa-MOS 80V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8987W, N-Channel enhancement mode 80V/4.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 80V/3.6A,RDS(ON)=85m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
afn8988w.pdf
AFN8988W Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8988W, N-Channel enhancement mode 100V/4.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=138m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit
afn8904.pdf
AFN8904 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8904, N-Channel enhancement mode 30V/5.6A,RDS(ON)=72m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.6A,RDS(ON)=95m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
afn8968.pdf
AFN8968 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8968, N-Channel enhancement mode 100V/3.0A,RDS(ON)=300m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/2.0A,RDS(ON)=310m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SCH1435
History: SCH1435
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