AFN9910 MOSFET: N-Ch, 100V, 6.5A. Full datasheet with pinout, specifications and replacement transistor list

..1. Size:839K alfa-mos
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AFN9910 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9910, N-Channel enhancement mode 100V/4A,RDS(ON)= 320m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4A,RDS(ON)= 340m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

9.1. Size:876K alfa-mos
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AFN9971B Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971B, N-Channel enhancement mode 60V/18A,RDS(ON)= 56m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 62m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

9.2. Size:773K alfa-mos
afn9977.pdf pdf_icon

AFN9977 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9977, N-Channel enhancement mode 60V/8A,RDS(ON)= 118m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)= 130m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo

9.3. Size:857K alfa-mos
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AFN9971 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971, N-Channel enhancement mode 60V/18A,RDS(ON)= 42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo

9.4. Size:832K alfa-mos
afn9987.pdf pdf_icon

AFN9987 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9987, N-Channel enhancement mode 90V/15A,RDS(ON)= 75m@VGS=10V MOSFET, uses Advanced Trench Technology to 90V/12A,RDS(ON)= 85m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo

9.5. Size:848K alfa-mos
afn9972s.pdf pdf_icon

AFN9972S Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9972S, N-Channel enhancement mode 60V/35A,RDS(ON)= 15m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)= 18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

9.6. Size:830K alfa-mos
afn9995s.pdf pdf_icon

AFN9995S Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9995S, N-Channel enhancement mode 100V/20A,RDS(ON)= 45m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/16A,RDS(ON)= 50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited f

9.7. Size:839K alfa-mos
afn9997.pdf pdf_icon

AFN9997 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9997, N-Channel enhancement mode 100V/8A,RDS(ON)= 120m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/6A,RDS(ON)= 125m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

AFN9910 Datasheet (PDF)

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