All MOSFET. AFN9910 Datasheet

 

AFN9910 Datasheet and Replacement


   Type Designator: AFN9910
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO-252
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AFN9910 Datasheet (PDF)

 ..1. Size:839K  alfa-mos
 afn9910.pdf pdf_icon

AFN9910

AFN9910 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9910, N-Channel enhancement mode 100V/4A,RDS(ON)= 320m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4A,RDS(ON)= 340m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

 9.1. Size:876K  alfa-mos
 afn9971b.pdf pdf_icon

AFN9910

AFN9971B Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971B, N-Channel enhancement mode 60V/18A,RDS(ON)= 56m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 62m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

 9.2. Size:773K  alfa-mos
 afn9977.pdf pdf_icon

AFN9910

AFN9977 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9977, N-Channel enhancement mode 60V/8A,RDS(ON)= 118m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)= 130m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo

 9.3. Size:857K  alfa-mos
 afn9971.pdf pdf_icon

AFN9910

AFN9971 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971, N-Channel enhancement mode 60V/18A,RDS(ON)= 42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo

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History: SQM120P06-07L | HLML6401 | TMP160N10A | SM4132T9RL | IPP60R120P7 | CS13N50A8H | AP85T03GH-HF

Keywords - AFN9910 MOSFET datasheet

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