AFN9910 datasheet, подбор замены

 ..1. Size:839K  alfa-mos
 afn9910.pdf 

AFN9910 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9910, N-Channel enhancement mode 100V/4A,RDS(ON)= 320m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4A,RDS(ON)= 340m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

 9.1. Size:876K  alfa-mos
 afn9971b.pdf 

AFN9971B Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971B, N-Channel enhancement mode 60V/18A,RDS(ON)= 56m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 62m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

 9.2. Size:773K  alfa-mos
 afn9977.pdf 

AFN9977 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9977, N-Channel enhancement mode 60V/8A,RDS(ON)= 118m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)= 130m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo

 9.3. Size:857K  alfa-mos
 afn9971.pdf 

AFN9971 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971, N-Channel enhancement mode 60V/18A,RDS(ON)= 42m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo

 9.4. Size:832K  alfa-mos
 afn9987.pdf 

AFN9987 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9987, N-Channel enhancement mode 90V/15A,RDS(ON)= 75m @VGS=10V MOSFET, uses Advanced Trench Technology to 90V/12A,RDS(ON)= 85m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo

 9.5. Size:848K  alfa-mos
 afn9972s.pdf 

AFN9972S Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9972S, N-Channel enhancement mode 60V/35A,RDS(ON)= 15m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)= 18m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

 9.6. Size:830K  alfa-mos
 afn9995s.pdf 

AFN9995S Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9995S, N-Channel enhancement mode 100V/20A,RDS(ON)= 45m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/16A,RDS(ON)= 50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited f

 9.7. Size:839K  alfa-mos
 afn9997.pdf 

AFN9997 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9997, N-Channel enhancement mode 100V/8A,RDS(ON)= 120m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/6A,RDS(ON)= 125m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for