All MOSFET. AFN9972S Datasheet

 

AFN9972S Datasheet and Replacement


   Type Designator: AFN9972S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO-252
 

 AFN9972S substitution

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AFN9972S Datasheet (PDF)

 ..1. Size:848K  alfa-mos
 afn9972s.pdf pdf_icon

AFN9972S

AFN9972S Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9972S, N-Channel enhancement mode 60V/35A,RDS(ON)= 15m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)= 18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

 8.1. Size:876K  alfa-mos
 afn9971b.pdf pdf_icon

AFN9972S

AFN9971B Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971B, N-Channel enhancement mode 60V/18A,RDS(ON)= 56m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 62m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

 8.2. Size:773K  alfa-mos
 afn9977.pdf pdf_icon

AFN9972S

AFN9977 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9977, N-Channel enhancement mode 60V/8A,RDS(ON)= 118m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)= 130m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo

 8.3. Size:857K  alfa-mos
 afn9971.pdf pdf_icon

AFN9972S

AFN9971 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971, N-Channel enhancement mode 60V/18A,RDS(ON)= 42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo

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Datasheet: AFN8987 , AFN8987W , AFN8988 , AFN8988W , AFN9530 , AFN9910 , AFN9971 , AFN9971B , CS150N03A8 , AFN9977 , AFN9987 , AFN9995S , AFN9997 , AFP1013 , AFP1023 , AFP1033 , AFP1073 .

History: STE145N65M5

Keywords - AFN9972S MOSFET datasheet

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