AFN9987 MOSFET. Datasheet pdf. Equivalent
Type Designator: AFN9987
Marking Code: 9987
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: TO-252
AFN9987 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AFN9987 Datasheet (PDF)
afn9987.pdf
AFN9987 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9987, N-Channel enhancement mode 90V/15A,RDS(ON)= 75m@VGS=10V MOSFET, uses Advanced Trench Technology to 90V/12A,RDS(ON)= 85m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo
afn9971b.pdf
AFN9971B Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971B, N-Channel enhancement mode 60V/18A,RDS(ON)= 56m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 62m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for
afn9910.pdf
AFN9910 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9910, N-Channel enhancement mode 100V/4A,RDS(ON)= 320m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4A,RDS(ON)= 340m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for
afn9977.pdf
AFN9977 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9977, N-Channel enhancement mode 60V/8A,RDS(ON)= 118m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)= 130m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo
afn9971.pdf
AFN9971 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971, N-Channel enhancement mode 60V/18A,RDS(ON)= 42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo
afn9972s.pdf
AFN9972S Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9972S, N-Channel enhancement mode 60V/35A,RDS(ON)= 15m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)= 18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for
afn9995s.pdf
AFN9995S Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9995S, N-Channel enhancement mode 100V/20A,RDS(ON)= 45m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/16A,RDS(ON)= 50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited f
afn9997.pdf
AFN9997 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9997, N-Channel enhancement mode 100V/8A,RDS(ON)= 120m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/6A,RDS(ON)= 125m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for
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