All MOSFET. AFN9995S Datasheet

 

AFN9995S Datasheet and Replacement


   Type Designator: AFN9995S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO-252
 

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AFN9995S Datasheet (PDF)

 ..1. Size:830K  alfa-mos
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AFN9995S

AFN9995S Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9995S, N-Channel enhancement mode 100V/20A,RDS(ON)= 45m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/16A,RDS(ON)= 50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited f

 8.1. Size:839K  alfa-mos
 afn9997.pdf pdf_icon

AFN9995S

AFN9997 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9997, N-Channel enhancement mode 100V/8A,RDS(ON)= 120m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/6A,RDS(ON)= 125m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

 9.1. Size:876K  alfa-mos
 afn9971b.pdf pdf_icon

AFN9995S

AFN9971B Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971B, N-Channel enhancement mode 60V/18A,RDS(ON)= 56m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 62m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

 9.2. Size:839K  alfa-mos
 afn9910.pdf pdf_icon

AFN9995S

AFN9910 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9910, N-Channel enhancement mode 100V/4A,RDS(ON)= 320m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4A,RDS(ON)= 340m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

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Datasheet: AFN8988W , AFN9530 , AFN9910 , AFN9971 , AFN9971B , AFN9972S , AFN9977 , AFN9987 , AON6380 , AFN9997 , AFP1013 , AFP1023 , AFP1033 , AFP1073 , AFP1303 , AFP1413 , AFP1433 .

History: 2SK2084S | SIHF820A | AUIRF7640S2 | QM4014D | AP4N1R1CDT-A | APT4F120K | TDM3424

Keywords - AFN9995S MOSFET datasheet

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