Справочник MOSFET. AFN9995S

 

AFN9995S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AFN9995S
   Маркировка: 9995S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 16 nC
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для AFN9995S

 

 

AFN9995S Datasheet (PDF)

 ..1. Size:830K  alfa-mos
 afn9995s.pdf

AFN9995S AFN9995S

AFN9995S Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9995S, N-Channel enhancement mode 100V/20A,RDS(ON)= 45m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/16A,RDS(ON)= 50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited f

 8.1. Size:839K  alfa-mos
 afn9997.pdf

AFN9995S AFN9995S

AFN9997 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9997, N-Channel enhancement mode 100V/8A,RDS(ON)= 120m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/6A,RDS(ON)= 125m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

 9.1. Size:876K  alfa-mos
 afn9971b.pdf

AFN9995S AFN9995S

AFN9971B Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971B, N-Channel enhancement mode 60V/18A,RDS(ON)= 56m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 62m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

 9.2. Size:839K  alfa-mos
 afn9910.pdf

AFN9995S AFN9995S

AFN9910 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9910, N-Channel enhancement mode 100V/4A,RDS(ON)= 320m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4A,RDS(ON)= 340m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

 9.3. Size:773K  alfa-mos
 afn9977.pdf

AFN9995S AFN9995S

AFN9977 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9977, N-Channel enhancement mode 60V/8A,RDS(ON)= 118m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)= 130m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo

 9.4. Size:857K  alfa-mos
 afn9971.pdf

AFN9995S AFN9995S

AFN9971 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971, N-Channel enhancement mode 60V/18A,RDS(ON)= 42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo

 9.5. Size:832K  alfa-mos
 afn9987.pdf

AFN9995S AFN9995S

AFN9987 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9987, N-Channel enhancement mode 90V/15A,RDS(ON)= 75m@VGS=10V MOSFET, uses Advanced Trench Technology to 90V/12A,RDS(ON)= 85m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo

 9.6. Size:848K  alfa-mos
 afn9972s.pdf

AFN9995S AFN9995S

AFN9972S Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9972S, N-Channel enhancement mode 60V/35A,RDS(ON)= 15m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)= 18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

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