AFP1023 MOSFET Datasheet: P-Ch, 20V, 0.45A. Full specification with pinout and replacement list

AFP1023 Specs and Replacement

   Type Designator: AFP1023
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 0.27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
   Package: SOT-563

AFP1023 substitution

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AFP1023 datasheet

..1. Size:598K alfa-mos
afp1023.pdf pdf_icon

AFP1023 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1023, P-Channel enhancement mode -20V/-0.45A, RDS(ON)= 620 m @ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-0.35A, RDS(ON)= 860 m @ VGS =-2.5V to provide excellent RDS(ON), low gate charge. -20V/-0.25A, RDS(ON)= 1450 m @ VGS =-1.8V These devices are part... See More ⇒

9.1. Size:574K alfa-mos
afp1013.pdf pdf_icon

AFP1013 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1013, P-Channel enhancement mode -20V/-0.6A, RDS(ON)= 620 m @ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-0.5A, RDS(ON)= 860 m @ VGS =-2.5V to provide excellent RDS(ON), low gate charge. -20V/-0.4A, RDS(ON)= 1450 m @ VGS =-1.8V These devices are particu... See More ⇒

9.2. Size:546K alfa-mos
afp1033.pdf pdf_icon

AFP1033 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1033, P-Channel enhancement mode -30V/-0.6A, RDS(ON)= 750 m @ VGS =-10V MOSFET, uses Advanced Trench Technology -30V/-0.3A, RDS(ON)= 950 m @ VGS =-4.5V to provide excellent RDS(ON), low gate charge. Low Offset (Error) Voltage These devices are particularly suited for ... See More ⇒

9.3. Size:661K alfa-mos
afp1073.pdf pdf_icon

AFP1073 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1073, P-Channel enhancement mode -20V/-0.45A, RDS(ON)= 620 m @ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-0.35A, RDS(ON)= 860 m @ VGS =-2.5V to provide excellent RDS(ON), low gate charge. -20V/-0.25A, RDS(ON)= 1450 m @ VGS =-1.8V These devices are part... See More ⇒

Detailed specifications: AFN9971 , AFN9971B , AFN9972S , AFN9977 , AFN9987 , AFN9995S , AFN9997 , AFP1013 , P60NF06 , AFP1033 , AFP1073 , AFP1303 , AFP1413 , AFP1433 , AFP1810 , AFP1913 , AFP2301 .