AFP1023
MOSFET. Datasheet pdf. Equivalent
Type Designator: AFP1023
Marking Code: A
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.27
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 0.45
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 1
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 20
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.62
Ohm
Package:
SOT-563
AFP1023
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AFP1023
Datasheet (PDF)
..1. Size:598K alfa-mos
afp1023.pdf
AFP1023 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1023, P-Channel enhancement mode -20V/-0.45A, RDS(ON)= 620 m@ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-0.35A, RDS(ON)= 860 m@ VGS =-2.5V to provide excellent RDS(ON), low gate charge. -20V/-0.25A, RDS(ON)= 1450 m@ VGS =-1.8V These devices are part
9.1. Size:574K alfa-mos
afp1013.pdf
AFP1013 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1013, P-Channel enhancement mode -20V/-0.6A, RDS(ON)= 620 m@ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-0.5A, RDS(ON)= 860 m@ VGS =-2.5V to provide excellent RDS(ON), low gate charge. -20V/-0.4A, RDS(ON)= 1450 m@ VGS =-1.8V These devices are particu
9.2. Size:546K alfa-mos
afp1033.pdf
AFP1033 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1033, P-Channel enhancement mode -30V/-0.6A, RDS(ON)= 750 m@ VGS =-10V MOSFET, uses Advanced Trench Technology -30V/-0.3A, RDS(ON)= 950 m@ VGS =-4.5V to provide excellent RDS(ON), low gate charge. Low Offset (Error) Voltage These devices are particularly suited for
9.3. Size:661K alfa-mos
afp1073.pdf
AFP1073 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1073, P-Channel enhancement mode -20V/-0.45A, RDS(ON)= 620 m@ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-0.35A, RDS(ON)= 860 m@ VGS =-2.5V to provide excellent RDS(ON), low gate charge. -20V/-0.25A, RDS(ON)= 1450 m@ VGS =-1.8V These devices are part
Datasheet: WPB4002
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