AFP1033 Datasheet. Specs and Replacement

Type Designator: AFP1033  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: SOT-523

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AFP1033 datasheet

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AFP1033

AFP1033 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1033, P-Channel enhancement mode -30V/-0.6A, RDS(ON)= 750 m @ VGS =-10V MOSFET, uses Advanced Trench Technology -30V/-0.3A, RDS(ON)= 950 m @ VGS =-4.5V to provide excellent RDS(ON), low gate charge. Low Offset (Error) Voltage These devices are particularly suited for ... See More ⇒

 9.1. Size:574K  alfa-mos
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AFP1033

AFP1013 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1013, P-Channel enhancement mode -20V/-0.6A, RDS(ON)= 620 m @ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-0.5A, RDS(ON)= 860 m @ VGS =-2.5V to provide excellent RDS(ON), low gate charge. -20V/-0.4A, RDS(ON)= 1450 m @ VGS =-1.8V These devices are particu... See More ⇒

 9.2. Size:661K  alfa-mos
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AFP1033

AFP1073 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1073, P-Channel enhancement mode -20V/-0.45A, RDS(ON)= 620 m @ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-0.35A, RDS(ON)= 860 m @ VGS =-2.5V to provide excellent RDS(ON), low gate charge. -20V/-0.25A, RDS(ON)= 1450 m @ VGS =-1.8V These devices are part... See More ⇒

 9.3. Size:598K  alfa-mos
 afp1023.pdf pdf_icon

AFP1033

AFP1023 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1023, P-Channel enhancement mode -20V/-0.45A, RDS(ON)= 620 m @ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-0.35A, RDS(ON)= 860 m @ VGS =-2.5V to provide excellent RDS(ON), low gate charge. -20V/-0.25A, RDS(ON)= 1450 m @ VGS =-1.8V These devices are part... See More ⇒

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Detailed specifications: AFN9971B, AFN9972S, AFN9977, AFN9987, AFN9995S, AFN9997, AFP1013, AFP1023, IRF730, AFP1073, AFP1303, AFP1413, AFP1433, AFP1810, AFP1913, AFP2301, AFP2301A

Keywords - AFP1033 MOSFET specs

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