All MOSFET. AFP2311A Datasheet

 

AFP2311A Datasheet and Replacement


   Type Designator: AFP2311A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23
 

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AFP2311A Datasheet (PDF)

 ..1. Size:621K  alfa-mos
 afp2311a.pdf pdf_icon

AFP2311A

AFP2311A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2311A, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=60m@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-2.2A,RDS(ON)=75m@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-1.8A,RDS(ON)=100m@VGS=1.8V These devices are particularly suited for lo

 7.1. Size:490K  alfa-mos
 afp2311.pdf pdf_icon

AFP2311A

AFP2311 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2311, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-3.2A,RDS(ON)=70m@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=100m@VGS=1.8V These devices are particularly suited for low

 8.1. Size:718K  alfa-mos
 afp2319as.pdf pdf_icon

AFP2311A

AFP2319AS Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2319AS, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=90m@VGS=-10V MOSFET, uses Advanced Trench Technology -40V/-2.4A,RDS(ON)=120m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 8.2. Size:557K  alfa-mos
 afp2317.pdf pdf_icon

AFP2311A

AFP2317 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2317, P-Channel enhancement mode -40V/-3.6A,RDS(ON)=52m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -40V/-3.2A,RDS(ON)=67m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

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Datasheet: AFP2301AS , AFP2301S , AFP2303 , AFP2303A , AFP2307A , AFP2309 , AFP2309A , AFP2311 , HY1906P , AFP2317 , AFP2319A , AFP2319AS , AFP2323 , AFP2323A , AFP2333A , AFP2337A , AFP2341 .

History: STY112N65M5 | DMG4822SSD | 7N65L-TN3-R | S15H12S | AP01N40J-HF | BL4N80-D | AOY2610E

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