All MOSFET. AFP2311A Datasheet

 

AFP2311A Datasheet and Replacement


   Type Designator: AFP2311A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23
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AFP2311A Datasheet (PDF)

 ..1. Size:621K  alfa-mos
 afp2311a.pdf pdf_icon

AFP2311A

AFP2311A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2311A, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=60m@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-2.2A,RDS(ON)=75m@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-1.8A,RDS(ON)=100m@VGS=1.8V These devices are particularly suited for lo

 7.1. Size:490K  alfa-mos
 afp2311.pdf pdf_icon

AFP2311A

AFP2311 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2311, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-3.2A,RDS(ON)=70m@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=100m@VGS=1.8V These devices are particularly suited for low

 8.1. Size:718K  alfa-mos
 afp2319as.pdf pdf_icon

AFP2311A

AFP2319AS Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2319AS, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=90m@VGS=-10V MOSFET, uses Advanced Trench Technology -40V/-2.4A,RDS(ON)=120m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 8.2. Size:557K  alfa-mos
 afp2317.pdf pdf_icon

AFP2311A

AFP2317 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2317, P-Channel enhancement mode -40V/-3.6A,RDS(ON)=52m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -40V/-3.2A,RDS(ON)=67m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AOY2610E | IRFB3004GPBF | BRCS200P03DP | SML60S16 | NCE65T680 | TSM4424CS | LKK47-06C5

Keywords - AFP2311A MOSFET datasheet

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