All MOSFET. AFP2319AS Datasheet

 

AFP2319AS Datasheet and Replacement


   Type Designator: AFP2319AS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SOT-23
 

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AFP2319AS Datasheet (PDF)

 ..1. Size:718K  alfa-mos
 afp2319as.pdf pdf_icon

AFP2319AS

AFP2319AS Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2319AS, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=90m@VGS=-10V MOSFET, uses Advanced Trench Technology -40V/-2.4A,RDS(ON)=120m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 6.1. Size:689K  alfa-mos
 afp2319a.pdf pdf_icon

AFP2319AS

AFP2319A Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2319A, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=100m@VGS=-10V MOSFET, uses Advanced Trench Technology -40V/-2.4A,RDS(ON)=130m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 8.1. Size:557K  alfa-mos
 afp2317.pdf pdf_icon

AFP2319AS

AFP2317 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2317, P-Channel enhancement mode -40V/-3.6A,RDS(ON)=52m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -40V/-3.2A,RDS(ON)=67m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

 8.2. Size:490K  alfa-mos
 afp2311.pdf pdf_icon

AFP2319AS

AFP2311 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2311, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-3.2A,RDS(ON)=70m@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=100m@VGS=1.8V These devices are particularly suited for low

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Datasheet: AFP2303A , AFP2307A , AFP2309 , AFP2309A , AFP2311 , AFP2311A , AFP2317 , AFP2319A , 5N50 , AFP2323 , AFP2323A , AFP2333A , AFP2337A , AFP2341 , AFP2343A , AFP2367AS , AFP2367S .

History: IXTL2x220N075T | TPM2008P3 | OSG65R041HZF | SVGP20500NL5 | AUIRF7769L2 | SM2605PSC | EM6K6

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