Справочник MOSFET. AFP2319AS

 

AFP2319AS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AFP2319AS
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
   Тип корпуса: SOT-23
 

 Аналог (замена) для AFP2319AS

   - подбор ⓘ MOSFET транзистора по параметрам

 

AFP2319AS Datasheet (PDF)

 ..1. Size:718K  alfa-mos
 afp2319as.pdf pdf_icon

AFP2319AS

AFP2319AS Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2319AS, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=90m@VGS=-10V MOSFET, uses Advanced Trench Technology -40V/-2.4A,RDS(ON)=120m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 6.1. Size:689K  alfa-mos
 afp2319a.pdf pdf_icon

AFP2319AS

AFP2319A Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2319A, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=100m@VGS=-10V MOSFET, uses Advanced Trench Technology -40V/-2.4A,RDS(ON)=130m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 8.1. Size:557K  alfa-mos
 afp2317.pdf pdf_icon

AFP2319AS

AFP2317 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2317, P-Channel enhancement mode -40V/-3.6A,RDS(ON)=52m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -40V/-3.2A,RDS(ON)=67m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

 8.2. Size:490K  alfa-mos
 afp2311.pdf pdf_icon

AFP2319AS

AFP2311 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2311, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-3.2A,RDS(ON)=70m@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=100m@VGS=1.8V These devices are particularly suited for low

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Другие MOSFET... AFP2303A , AFP2307A , AFP2309 , AFP2309A , AFP2311 , AFP2311A , AFP2317 , AFP2319A , 5N50 , AFP2323 , AFP2323A , AFP2333A , AFP2337A , AFP2341 , AFP2343A , AFP2367AS , AFP2367S .

History: SWN4N65K2 | SVS65R240FJDD4 | HTN027N03P | AP2608AGK-HF | 15NM70G-TM3-T | BLM8205E-G | SVS11N65T

 

 
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