All MOSFET. AFP3411 Datasheet

 

AFP3411 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AFP3411
   Marking Code: 11*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TSOP-6

 AFP3411 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AFP3411 Datasheet (PDF)

 ..1. Size:481K  alfa-mos
 afp3411.pdf

AFP3411 AFP3411

AFP3411 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3411, P-Channel enhancement mode -30V/-6.0A,RDS(ON)=36m@VGS=10V MOSFET, uses Advanced Trench Technology -30V/-4.5A,RDS(ON)=46m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 8.1. Size:520K  alfa-mos
 afp3413.pdf

AFP3411 AFP3411

AFP3413 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3413, P-Channel enhancement mode -20V/-3.2A,RDS(ON)=95m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.6A,RDS(ON)=125m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-1.5A,RDS(ON)=205m@VGS=-1.8V These devices are particularly suited for

 8.2. Size:651K  alfa-mos
 afp3413a.pdf

AFP3411 AFP3411

AFP3413A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3413A, P-Channel enhancement mode -20V/-2.6A,RDS(ON)=120m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.2A,RDS(ON)=170m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-1.2A,RDS(ON)=230m@VGS=-1.8V These devices are particularly suited f

 8.3. Size:557K  alfa-mos
 afp3415.pdf

AFP3411 AFP3411

AFP3415 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3415, P-Channel enhancement mode -20V/-4.9A,RDS(ON)=45m@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-3.4A,RDS(ON)=58m@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.2A,RDS(ON)=85m@VGS=1.8V These devices are particularly suited for low

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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