AFP3679S Datasheet. Specs and Replacement
Type Designator: AFP3679S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 495 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO-252
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AFP3679S datasheet
afp3679s.pdf
AFP3679S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3679S, P-Channel enhancement mode -30V/-20A,RDS(ON)=10m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-15A,RDS(ON)=15m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite... See More ⇒
Detailed specifications: AFP3413, AFP3413A, AFP3415, AFP3425, AFP3459, AFP3481S, AFP3485, AFP3497, IRFP250N, AFP3804, AFP3981, AFP3993, AFP4403, AFP4435, AFP4435S, AFP4435W, AFP4435WS
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