All MOSFET. AFP3679S Datasheet

 

AFP3679S Datasheet and Replacement


   Type Designator: AFP3679S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 495 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-252
 

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AFP3679S Datasheet (PDF)

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AFP3679S

AFP3679S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3679S, P-Channel enhancement mode -30V/-20A,RDS(ON)=10m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-15A,RDS(ON)=15m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

Datasheet: AFP3413 , AFP3413A , AFP3415 , AFP3425 , AFP3459 , AFP3481S , AFP3485 , AFP3497 , AON7408 , AFP3804 , AFP3981 , AFP3993 , AFP4403 , AFP4435 , AFP4435S , AFP4435W , AFP4435WS .

History: IPA60R330P6 | ME6968ED-G | AP3N4R0S | ME4946-G | NP80N06NLG | FDS6672A | P5102FMA

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