AFP3993 Datasheet. Specs and Replacement
Type Designator: AFP3993 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TSOP-6
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AFP3993 datasheet
afp3993.pdf
AFP3993 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3993, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=150m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=235m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s... See More ⇒
afp3981.pdf
AFP3981 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3981, P-Channel enhancement mode -20V/-3.2A,RDS(ON)=100m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=135m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-1.5A,RDS(ON)=190m @VGS=-1.8V These devices are particularly suited for... See More ⇒
Detailed specifications: AFP3425, AFP3459, AFP3481S, AFP3485, AFP3497, AFP3679S, AFP3804, AFP3981, AON7408, AFP4403, AFP4435, AFP4435S, AFP4435W, AFP4435WS, AFP4447, AFP4535, AFP4535W
Keywords - AFP3993 MOSFET specs
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