AFP3993 Datasheet and Replacement
Type Designator: AFP3993
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TSOP-6
AFP3993 substitution
AFP3993 Datasheet (PDF)
afp3993.pdf
AFP3993 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3993, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=150m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=235m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
afp3981.pdf
AFP3981 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3981, P-Channel enhancement mode -20V/-3.2A,RDS(ON)=100m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=135m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-1.5A,RDS(ON)=190m@VGS=-1.8V These devices are particularly suited for
Datasheet: AFP3425 , AFP3459 , AFP3481S , AFP3485 , AFP3497 , AFP3679S , AFP3804 , AFP3981 , AON7408 , AFP4403 , AFP4435 , AFP4435S , AFP4435W , AFP4435WS , AFP4447 , AFP4535 , AFP4535W .
History: TDM3444 | AFP3050S | FDS4070N3 | AFP2367S | AFP3401S | TDM3484 | KIA4N60H-252
Keywords - AFP3993 MOSFET datasheet
AFP3993 cross reference
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AFP3993 substitution
AFP3993 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: TDM3444 | AFP3050S | FDS4070N3 | AFP2367S | AFP3401S | TDM3484 | KIA4N60H-252
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