AFP4535 MOSFET. Datasheet pdf. Equivalent
Type Designator: AFP4535
Marking Code: 4535
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 6.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 145 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SOP-8P
AFP4535 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AFP4535 Datasheet (PDF)
afp4535.pdf
AFP4535 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4535, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-5.2A,RDS(ON)= 50m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
afp4535w.pdf
AFP4535W Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4535W, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-5.2A,RDS(ON)= 50m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
afp4599w.pdf
AFP4599W Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFP4599W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 40V/8A,RDS(ON)= 22m@VGS=10V to provide excellent RDS(ON), low gate charge. 40V/6A,RDS(ON)= 28m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power ma
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: 2SK646
History: 2SK646
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