All MOSFET. AFP4535 Datasheet

 

AFP4535 Datasheet and Replacement


   Type Designator: AFP4535
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOP-8P
 

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AFP4535 Datasheet (PDF)

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AFP4535

AFP4535 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4535, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-5.2A,RDS(ON)= 50m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 0.1. Size:804K  alfa-mos
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AFP4535

AFP4535W Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4535W, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-5.2A,RDS(ON)= 50m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 9.1. Size:988K  alfa-mos
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AFP4535

AFP4599W Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFP4599W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 40V/8A,RDS(ON)= 22m@VGS=10V to provide excellent RDS(ON), low gate charge. 40V/6A,RDS(ON)= 28m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power ma

Datasheet: AFP3981 , AFP3993 , AFP4403 , AFP4435 , AFP4435S , AFP4435W , AFP4435WS , AFP4447 , AO3400 , AFP4535W , AFP4599W , AFP4637 , AFP4637W , AFP4925 , AFP4925S , AFP4925W , AFP4925WS .

History: CHM8531JGP | HSS2306A | CTLM8110-M832D

Keywords - AFP4535 MOSFET datasheet

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