AFP4535 Datasheet. Specs and Replacement

Type Designator: AFP4535  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SOP-8P

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AFP4535 substitution

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AFP4535 datasheet

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AFP4535

AFP4535 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4535, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m @VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-5.2A,RDS(ON)= 50m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s... See More ⇒

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AFP4535

AFP4535W Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4535W, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m @VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-5.2A,RDS(ON)= 50m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly... See More ⇒

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AFP4535

AFP4599W Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFP4599W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 40V/8A,RDS(ON)= 22m @VGS=10V to provide excellent RDS(ON), low gate charge. 40V/6A,RDS(ON)= 28m @VGS=4.5V These devices are particularly suited for low P-Channel voltage power ma... See More ⇒

Detailed specifications: AFP3981, AFP3993, AFP4403, AFP4435, AFP4435S, AFP4435W, AFP4435WS, AFP4447, AO3401, AFP4535W, AFP4599W, AFP4637, AFP4637W, AFP4925, AFP4925S, AFP4925W, AFP4925WS

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