AFP4535W
MOSFET. Datasheet pdf. Equivalent
Type Designator: AFP4535W
Marking Code: 4535W
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 6.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 13
nC
trⓘ - Rise Time: 55
nS
Cossⓘ -
Output Capacitance: 145
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035
Ohm
Package:
SOP-8P
AFP4535W
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AFP4535W
Datasheet (PDF)
..1. Size:804K alfa-mos
afp4535w.pdf
AFP4535W Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4535W, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-5.2A,RDS(ON)= 50m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
7.1. Size:803K alfa-mos
afp4535.pdf
AFP4535 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4535, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-5.2A,RDS(ON)= 50m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
9.1. Size:988K alfa-mos
afp4599w.pdf
AFP4599W Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFP4599W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 40V/8A,RDS(ON)= 22m@VGS=10V to provide excellent RDS(ON), low gate charge. 40V/6A,RDS(ON)= 28m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power ma
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