All MOSFET. AFP4637 Datasheet

 

AFP4637 Datasheet and Replacement


   Type Designator: AFP4637
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
   Package: SOP-8P
 

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AFP4637 Datasheet (PDF)

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AFP4637

AFP4637 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4637, P-Channel enhancement mode -40V/-6.8A,RDS(ON)= 37m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-5.8A,RDS(ON)= 54m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

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AFP4637

AFP4637W Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4637W, P-Channel enhancement mode -40V/-6.8A,RDS(ON)= 37m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-5.8A,RDS(ON)= 54m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

Datasheet: AFP4435 , AFP4435S , AFP4435W , AFP4435WS , AFP4447 , AFP4535 , AFP4535W , AFP4599W , 2SK3568 , AFP4637W , AFP4925 , AFP4925S , AFP4925W , AFP4925WS , AFP4943WS , AFP4948 , AFP4953S .

History: LNTA4001NT1G | PSMN3R9-60XS | SI2310A | MPSH70M290 | PJW7N06A | PNMTO600V5 | SI2101

Keywords - AFP4637 MOSFET datasheet

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