All MOSFET. AFP4925W Datasheet

 

AFP4925W Datasheet and Replacement


   Type Designator: AFP4925W
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOP-8P
 

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AFP4925W Datasheet (PDF)

 ..1. Size:564K  alfa-mos
 afp4925w.pdf pdf_icon

AFP4925W

AFP4925W Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4925W, P-Channel enhancement mode -30V/ -7.2A,RDS(ON)=30m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -5.8A,RDS(ON)=36m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 0.1. Size:589K  alfa-mos
 afp4925ws.pdf pdf_icon

AFP4925W

AFP4925WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4925WS, P-Channel enhancement mode -30V/ -8.0A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -6.0A,RDS(ON)=26m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 7.1. Size:589K  alfa-mos
 afp4925s.pdf pdf_icon

AFP4925W

AFP4925S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4925S, P-Channel enhancement mode -30V/ -7.5A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -6.0A,RDS(ON)=26m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 7.2. Size:499K  alfa-mos
 afp4925.pdf pdf_icon

AFP4925W

AFP4925 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4925, P-Channel enhancement mode -30V/ -7.2A,RDS(ON)=28m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -5.8A,RDS(ON)=37m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

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Datasheet: AFP4447 , AFP4535 , AFP4535W , AFP4599W , AFP4637 , AFP4637W , AFP4925 , AFP4925S , TK10A60D , AFP4925WS , AFP4943WS , AFP4948 , AFP4953S , AFP4953WS , AFP6405S , AFP6405WS , AFP6459 .

History: APT8014JFLL | FQD17N08LTM | LSB60R280HT | BUK9K18-40E | YJG90G10A | STN3414 | CS6N70F

Keywords - AFP4925W MOSFET datasheet

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