All MOSFET. AFP4943WS Datasheet

 

AFP4943WS Datasheet and Replacement


   Type Designator: AFP4943WS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOP-8P
 

 AFP4943WS substitution

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AFP4943WS Datasheet (PDF)

 ..1. Size:505K  alfa-mos
 afp4943ws.pdf pdf_icon

AFP4943WS

AFP4943WS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4943WS, P-Channel enhancement mode -20V/ -9.0A,RDS(ON)=25m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/ -7.0A,RDS(ON)=32m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/ -3.0A,RDS(ON)=38m@VGS=-1.8V These devices are particularly suited

 8.1. Size:494K  alfa-mos
 afp4948.pdf pdf_icon

AFP4943WS

AFP4948 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4948, P-Channel enhancement mode -60V/-4.0A,RDS(ON)= 100m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3.0A,RDS(ON)= 120m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 9.1. Size:593K  alfa-mos
 afp4953s.pdf pdf_icon

AFP4943WS

AFP4953S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4953S, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=52m@VGS=10V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=76m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

 9.2. Size:589K  alfa-mos
 afp4925s.pdf pdf_icon

AFP4943WS

AFP4925S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4925S, P-Channel enhancement mode -30V/ -7.5A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -6.0A,RDS(ON)=26m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

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Datasheet: AFP4535W , AFP4599W , AFP4637 , AFP4637W , AFP4925 , AFP4925S , AFP4925W , AFP4925WS , 12N60 , AFP4948 , AFP4953S , AFP4953WS , AFP6405S , AFP6405WS , AFP6459 , AFP6801 , AFP6993 .

History: AFP6405WS

Keywords - AFP4943WS MOSFET datasheet

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