All MOSFET. AFP4953S Datasheet

 

AFP4953S Datasheet and Replacement


   Type Designator: AFP4953S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: SOP-8P
 

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AFP4953S Datasheet (PDF)

 ..1. Size:593K  alfa-mos
 afp4953s.pdf pdf_icon

AFP4953S

AFP4953S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4953S, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=52m@VGS=10V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=76m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

 7.1. Size:593K  alfa-mos
 afp4953ws.pdf pdf_icon

AFP4953S

AFP4953WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFS4953WS, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=80m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

 9.1. Size:505K  alfa-mos
 afp4943ws.pdf pdf_icon

AFP4953S

AFP4943WS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4943WS, P-Channel enhancement mode -20V/ -9.0A,RDS(ON)=25m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/ -7.0A,RDS(ON)=32m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/ -3.0A,RDS(ON)=38m@VGS=-1.8V These devices are particularly suited

 9.2. Size:494K  alfa-mos
 afp4948.pdf pdf_icon

AFP4953S

AFP4948 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4948, P-Channel enhancement mode -60V/-4.0A,RDS(ON)= 100m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3.0A,RDS(ON)= 120m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

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Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SM6536D1RL

Keywords - AFP4953S MOSFET datasheet

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