AFP4953S
MOSFET. Datasheet pdf. Equivalent
Type Designator: AFP4953S
Marking Code: 4953S
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 5.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052
Ohm
Package:
SOP-8P
AFP4953S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AFP4953S
Datasheet (PDF)
..1. Size:593K alfa-mos
afp4953s.pdf 
AFP4953S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4953S, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=52m@VGS=10V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=76m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite
7.1. Size:593K alfa-mos
afp4953ws.pdf
AFP4953WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFS4953WS, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=80m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui
9.1. Size:505K alfa-mos
afp4943ws.pdf
AFP4943WS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4943WS, P-Channel enhancement mode -20V/ -9.0A,RDS(ON)=25m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/ -7.0A,RDS(ON)=32m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/ -3.0A,RDS(ON)=38m@VGS=-1.8V These devices are particularly suited
9.2. Size:494K alfa-mos
afp4948.pdf
AFP4948 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4948, P-Channel enhancement mode -60V/-4.0A,RDS(ON)= 100m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3.0A,RDS(ON)= 120m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
9.3. Size:589K alfa-mos
afp4925s.pdf
AFP4925S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4925S, P-Channel enhancement mode -30V/ -7.5A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -6.0A,RDS(ON)=26m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
9.4. Size:499K alfa-mos
afp4925.pdf
AFP4925 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4925, P-Channel enhancement mode -30V/ -7.2A,RDS(ON)=28m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -5.8A,RDS(ON)=37m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui
9.5. Size:564K alfa-mos
afp4925w.pdf
AFP4925W Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4925W, P-Channel enhancement mode -30V/ -7.2A,RDS(ON)=30m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -5.8A,RDS(ON)=36m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
9.6. Size:589K alfa-mos
afp4925ws.pdf
AFP4925WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4925WS, P-Channel enhancement mode -30V/ -8.0A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -6.0A,RDS(ON)=26m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
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