All MOSFET. AFP6801 Datasheet

 

AFP6801 Datasheet and Replacement


   Type Designator: AFP6801
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
   Package: TSOP-6
 

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AFP6801 Datasheet (PDF)

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AFP6801

AFP6801 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP6801, P-Channel enhancement mode -30V/-3.8A,RDS(ON)=135m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.8A,RDS(ON)=175m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.8A,RDS(ON)=245m@VGS=-2.5V These devices are particularly suited fo

Datasheet: AFP4925WS , AFP4943WS , AFP4948 , AFP4953S , AFP4953WS , AFP6405S , AFP6405WS , AFP6459 , IRFP450 , AFP6993 , AFP7617WS , AFP8206 , AFP8451 , AFP8452 , AFP8463 , AFP8473 , AFP8483 .

History: APT42F50S | SI2301-TP | FTK4N60I | IXTX120N65X2 | SI7862ADP | TSB15N10A | ELM13414CA

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