AFP6801 Datasheet and Replacement
Type Designator: AFP6801
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
Package: TSOP-6
AFP6801 substitution
AFP6801 Datasheet (PDF)
afp6801.pdf

AFP6801 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP6801, P-Channel enhancement mode -30V/-3.8A,RDS(ON)=135m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.8A,RDS(ON)=175m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.8A,RDS(ON)=245m@VGS=-2.5V These devices are particularly suited fo
Datasheet: AFP4925WS , AFP4943WS , AFP4948 , AFP4953S , AFP4953WS , AFP6405S , AFP6405WS , AFP6459 , IRFP450 , AFP6993 , AFP7617WS , AFP8206 , AFP8451 , AFP8452 , AFP8463 , AFP8473 , AFP8483 .
History: IXFK170N20P
Keywords - AFP6801 MOSFET datasheet
AFP6801 cross reference
AFP6801 equivalent finder
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AFP6801 replacement
History: IXFK170N20P



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