AFP6801 Datasheet. Specs and Replacement

Type Designator: AFP6801  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm

Package: TSOP-6

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AFP6801 datasheet

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AFP6801

AFP6801 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP6801, P-Channel enhancement mode -30V/-3.8A,RDS(ON)=135m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.8A,RDS(ON)=175m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.8A,RDS(ON)=245m @VGS=-2.5V These devices are particularly suited fo... See More ⇒

Detailed specifications: AFP4925WS, AFP4943WS, AFP4948, AFP4953S, AFP4953WS, AFP6405S, AFP6405WS, AFP6459, NCEP15T14, AFP6993, AFP7617WS, AFP8206, AFP8451, AFP8452, AFP8463, AFP8473, AFP8483

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