All MOSFET. AFP6993 Datasheet

 

AFP6993 Datasheet and Replacement


   Type Designator: AFP6993
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: -30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TSSOP-8P
 

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AFP6993 Datasheet (PDF)

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AFP6993

AFP6993 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP6993, P-Channel enhancement mode -30V/ -4.8A,RDS(ON)=32m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -3.0A,RDS(ON)=38m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

Datasheet: AFP4943WS , AFP4948 , AFP4953S , AFP4953WS , AFP6405S , AFP6405WS , AFP6459 , AFP6801 , IRFP250 , AFP7617WS , AFP8206 , AFP8451 , AFP8452 , AFP8463 , AFP8473 , AFP8483 , AFP8803 .

History: IRL3303PBF | RU3020L

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