AFP6993 Datasheet. Specs and Replacement

Type Designator: AFP6993  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: -30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TSSOP-8P

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AFP6993 datasheet

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AFP6993

AFP6993 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP6993, P-Channel enhancement mode -30V/ -4.8A,RDS(ON)=32m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -3.0A,RDS(ON)=38m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui... See More ⇒

Detailed specifications: AFP4943WS, AFP4948, AFP4953S, AFP4953WS, AFP6405S, AFP6405WS, AFP6459, AFP6801, AON7506, AFP7617WS, AFP8206, AFP8451, AFP8452, AFP8463, AFP8473, AFP8483, AFP8803

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