AFP7617WS Datasheet and Replacement
Type Designator: AFP7617WS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: DFN3X3-8L
AFP7617WS substitution
AFP7617WS Datasheet (PDF)
afp7617ws.pdf

AFP7617WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP7617WS, P-Channel enhancement mode -30V/-15A,RDS(ON)=10m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-10A,RDS(ON)=16m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui
Datasheet: AFP4948 , AFP4953S , AFP4953WS , AFP6405S , AFP6405WS , AFP6459 , AFP6801 , AFP6993 , 20N50 , AFP8206 , AFP8451 , AFP8452 , AFP8463 , AFP8473 , AFP8483 , AFP8803 , AFP8823 .
History: CEF09N7G | SM6107PSU | AOL1202 | FIR14NS70AFG | CEB75N06G | TSM3548DCX6 | SIHFBC30A
Keywords - AFP7617WS MOSFET datasheet
AFP7617WS cross reference
AFP7617WS equivalent finder
AFP7617WS lookup
AFP7617WS substitution
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History: CEF09N7G | SM6107PSU | AOL1202 | FIR14NS70AFG | CEB75N06G | TSM3548DCX6 | SIHFBC30A



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