AFP7617WS MOSFET. Datasheet pdf. Equivalent
Type Designator: AFP7617WS
Marking Code: 7617WS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 25 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: DFN3X3-8L
AFP7617WS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AFP7617WS Datasheet (PDF)
afp7617ws.pdf
AFP7617WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP7617WS, P-Channel enhancement mode -30V/-15A,RDS(ON)=10m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-10A,RDS(ON)=16m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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