All MOSFET. AFP7617WS Datasheet

 

AFP7617WS Datasheet and Replacement


   Type Designator: AFP7617WS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: DFN3X3-8L
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AFP7617WS Datasheet (PDF)

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AFP7617WS

AFP7617WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP7617WS, P-Channel enhancement mode -30V/-15A,RDS(ON)=10m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-10A,RDS(ON)=16m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

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History: WMM11N80M3 | IRFI7536G | AON7240 | HGS120N10SL | FDMS9620S

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