AFP7617WS Datasheet. Specs and Replacement
Type Designator: AFP7617WS 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: DFN3X3-8L
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AFP7617WS substitution
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AFP7617WS datasheet
afp7617ws.pdf
AFP7617WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP7617WS, P-Channel enhancement mode -30V/-15A,RDS(ON)=10m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-10A,RDS(ON)=16m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui... See More ⇒
Detailed specifications: AFP4948, AFP4953S, AFP4953WS, AFP6405S, AFP6405WS, AFP6459, AFP6801, AFP6993, STP80NF70, AFP8206, AFP8451, AFP8452, AFP8463, AFP8473, AFP8483, AFP8803, AFP8823
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