All MOSFET. AFP8943 Datasheet

 

AFP8943 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AFP8943
   Marking Code: 43*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 4.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
   Package: SOT-89

 AFP8943 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AFP8943 Datasheet (PDF)

 ..1. Size:915K  alfa-mos
 afp8943.pdf

AFP8943 AFP8943

AFP8943 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8943, P-Channel enhancement mode -40V/-4.6A,RDS(ON)= 43m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-3.6A,RDS(ON)= 58m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 9.1. Size:606K  alfa-mos
 afp8989.pdf

AFP8943 AFP8943

AFP8989 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8989, P-Channel enhancement mode -60V/-3.6A,RDS(ON)= 115m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-2.6A,RDS(ON)= 125m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 9.2. Size:689K  alfa-mos
 afp8995.pdf

AFP8943 AFP8943

AFP8995 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8995, P-Channel enhancement mode -30V/-4.6A,RDS(ON)= 125m@VGS= -10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)= 165m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 9.3. Size:595K  alfa-mos
 afp8931.pdf

AFP8943 AFP8943

AFP8931 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8931, P-Channel enhancement mode -30V/-4.6A,RDS(ON)= 36m@VGS= -10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)= 46m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

Datasheet: AFP8452 , AFP8463 , AFP8473 , AFP8483 , AFP8803 , AFP8823 , AFP8833 , AFP8931 , 2N60 , AFP8989 , AFP8995 , AFP9407 , AFP9434WS , AFP9435S , AFP9435WS , AFP9510S , AFP9565S .

History: SSM3J01F | SSM3J108TU | PJT138K | SDF034JAB-D

 

 
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