AFP8943 Datasheet. Specs and Replacement

Type Designator: AFP8943  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm

Package: SOT-89

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AFP8943 datasheet

 ..1. Size:915K  alfa-mos
 afp8943.pdf pdf_icon

AFP8943

AFP8943 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8943, P-Channel enhancement mode -40V/-4.6A,RDS(ON)= 43m @VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-3.6A,RDS(ON)= 58m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s... See More ⇒

 9.1. Size:606K  alfa-mos
 afp8989.pdf pdf_icon

AFP8943

AFP8989 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8989, P-Channel enhancement mode -60V/-3.6A,RDS(ON)= 115m @VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-2.6A,RDS(ON)= 125m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly... See More ⇒

 9.2. Size:689K  alfa-mos
 afp8995.pdf pdf_icon

AFP8943

AFP8995 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8995, P-Channel enhancement mode -30V/-4.6A,RDS(ON)= 125m @VGS= -10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)= 165m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly... See More ⇒

 9.3. Size:595K  alfa-mos
 afp8931.pdf pdf_icon

AFP8943

AFP8931 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8931, P-Channel enhancement mode -30V/-4.6A,RDS(ON)= 36m @VGS= -10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)= 46m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s... See More ⇒

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Detailed specifications: AFP8452, AFP8463, AFP8473, AFP8483, AFP8803, AFP8823, AFP8833, AFP8931, RFP50N06, AFP8989, AFP8995, AFP9407, AFP9434WS, AFP9435S, AFP9435WS, AFP9510S, AFP9565S

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