AFP8943 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AFP8943
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 1.45 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 55 ns
Cossⓘ - Выходная емкость: 145 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.043 Ohm
Тип корпуса: SOT-89
Аналог (замена) для AFP8943
AFP8943 Datasheet (PDF)
afp8943.pdf

AFP8943 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8943, P-Channel enhancement mode -40V/-4.6A,RDS(ON)= 43m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-3.6A,RDS(ON)= 58m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
afp8989.pdf

AFP8989 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8989, P-Channel enhancement mode -60V/-3.6A,RDS(ON)= 115m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-2.6A,RDS(ON)= 125m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
afp8995.pdf

AFP8995 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8995, P-Channel enhancement mode -30V/-4.6A,RDS(ON)= 125m@VGS= -10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)= 165m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
afp8931.pdf

AFP8931 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8931, P-Channel enhancement mode -30V/-4.6A,RDS(ON)= 36m@VGS= -10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)= 46m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
Другие MOSFET... AFP8452 , AFP8463 , AFP8473 , AFP8483 , AFP8803 , AFP8823 , AFP8833 , AFP8931 , SKD502T , AFP8989 , AFP8995 , AFP9407 , AFP9434WS , AFP9435S , AFP9435WS , AFP9510S , AFP9565S .
History: KF80N08P | 4N80L-TF3-T | WMK36N60C4 | IXFK94N50P2 | WMS05P10TS | NTMFD5C650NLT1G | RU2HE5L
History: KF80N08P | 4N80L-TF3-T | WMK36N60C4 | IXFK94N50P2 | WMS05P10TS | NTMFD5C650NLT1G | RU2HE5L



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