IRFB20N50KPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFB20N50KPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 280
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 110
nC
trⓘ - Rise Time: 74
nS
Cossⓘ -
Output Capacitance: 320
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25
Ohm
Package:
TO-220AB
IRFB20N50KPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFB20N50KPBF
Datasheet (PDF)
..1. Size:217K international rectifier
irfb20n50kpbf.pdf 
PD - 94984IRFB20N50KPbFSMPS MOSFETHEXFET Power MOSFETAppIicationsVDSS RDS(on) typ. IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply500V 0.21 20Al High Speed Power Switchingl Hard Switched and High FrequencyCircuitsl Lead-FreeBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
4.1. Size:183K international rectifier
irfb20n50k.pdf
PD - 94418AIRFB20N50KSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply500V 0.21 20Al High Speed Power Switchingl Hard Switched and High FrequencyCircuitsBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Charact
4.2. Size:858K vishay
irfb20n50k sihfb20n50k.pdf
IRFB20N50K, SiHFB20N50KVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500Requirement AvailableRDS(on) ()VGS = 10 V 0.21 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 110COMPLIANTRuggednessQgs (nC) 33 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 54and CurrentConf
9.1. Size:170K international rectifier
irfb260npbf.pdf
PD - 95473SMPS MOSFETIRFB260NPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.040 56Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to Reduce Switching Lossesl Fully Characterized Capacitance Including Effective COSS toSimplify Design, (See App. Note AN1001)l Fully Characterized Avalanche Voltage and CurrentTO-220ABAb
9.2. Size:142K international rectifier
irfs23n15d irfb23n15d irfsl23n15d.pdf
PD - 93894AIRFB23N15D IRFS23N15DSMPS MOSFET IRFSL23N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters 150V 0.090 23ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262 Fully Characterized Avalan
9.3. Size:278K international rectifier
irfb23n15dpbf irfsl23n15dpbf.pdf
PD - 95535IRFB23N15DPbF IRFS23N15DPbFSMPS MOSFET IRFSL23N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 150V 0.090 23Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262l F
9.4. Size:90K international rectifier
irfb260n.pdf
PD - 94270SMPS MOSFETIRFB260NHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.040 56ABenefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS toSimplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and CurrentTO-220ABAbsolute Maximum Ratin
9.5. Size:279K international rectifier
irfb23n20dpbf irfs23n20dpbf.pdf
PD - 95536IRFB23N20DPbF IRFS23N20DPbFSMPS MOSFET IRFSL23N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.10 24Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanc
9.6. Size:196K international rectifier
irfb23n20d.pdf
PD- 93904AIRFB23N20D IRFS23N20DSMPS MOSFET IRFSL23N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.10 24ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand CurrentT
9.7. Size:170K infineon
irfb260npbf.pdf
PD - 95473SMPS MOSFETIRFB260NPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.040 56Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to Reduce Switching Lossesl Fully Characterized Capacitance Including Effective COSS toSimplify Design, (See App. Note AN1001)l Fully Characterized Avalanche Voltage and CurrentTO-220ABAb
9.8. Size:278K infineon
irfb23n15dpbf irfs23n15dpbf irfsl23n15dpbf.pdf
PD - 95535IRFB23N15DPbF IRFS23N15DPbFSMPS MOSFET IRFSL23N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 150V 0.090 23Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262l F
9.9. Size:275K infineon
irfb23n20dpbf irfs23n20dpbf irfsl23n20dpbf.pdf
PD - 95536IRFB23N20DPbF IRFS23N20DPbFSMPS MOSFET IRFSL23N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.10 24Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanc
9.10. Size:844K cn vbsemi
irfb23n15d.pdf
IRFB23N15Dwww.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 150 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.075 100 % Rg and UIS testedID (A) 20Configuration SinglePackage TO-220TO-220ABDGSSN-Channel MOSFETDGTop ViewSABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise no
9.11. Size:245K inchange semiconductor
irfb260n.pdf
isc N-Channel MOSFET Transistor IRFB260NIIRFB260NFEATURESStatic drain-source on-resistance:RDS(on) 40mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFully Characterized Avalanche Voltage and CurrentABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
9.12. Size:227K inchange semiconductor
irfb23n15d.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB23N15DIIRFB23N15DFEATURESStatic drain-source on-resistance:RDS(on) 90mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: WPB4002
, FDM15-06KC5
, FQD2N60CTM
, FDM47-06KC5
, FDPF045N10A
, FMD15-06KC5
, FDMS8672S
, FMD21-05QC
, IRFP250N
, FDMS86368F085
, FMD47-06KC5
, FDBL86361F085
, FMK75-01F
, FMM110-015X2F
, FMM150-0075X2F
, FMM22-05PF
, FMM22-06PF
.
