IRFB3006GPBF Specs and Replacement
Type Designator: IRFB3006GPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 195 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 182 nS
Cossⓘ - Output Capacitance: 1020 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: TO-220AB
IRFB3006GPBF substitution
IRFB3006GPBF datasheet
irfb3006gpbf.pdf
PD - 96238 IRFB3006GPbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.1m l Uninterruptible Power Supply l High Speed Power Switching max. 2.5m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 270A ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ... See More ⇒
irfb3006pbf.pdf
IRFB3006PbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification RDS(on) typ. 2.1m in SMPS l Uninterruptible Power Supply max. 2.5m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic D dV/dt Ruggedness l Full... See More ⇒
irfb3006.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3006 IIRFB3006 FEATURES Static drain-source on-resistance RDS(on) 2.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU... See More ⇒
irfb3004pbf irfs3004pbf irfsl3004pbf.pdf
PD - 97377 IRFB3004PbF IRFS3004PbF IRFSL3004PbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 40V l Uninterruptible Power Supply RDS(on) typ. 1.4m l High Speed Power Switching l Hard Switched and High Frequency Circuits max. 1.75m G ID (Silicon Limited) 340A c Benefits ID (Package Limited) 195A S l Improved Gate, ... See More ⇒
Detailed specifications: IRFB18N50KPBF , IRFB20N50K , IRFB20N50KPBF , IRFB23N15DPBF , IRFB23N20DPBF , IRFB260NPBF , IRFB3004GPBF , IRFB3004PBF , 8205A , IRFB3006PBF , IRFB3077GPBF , IRFB3077PBF , IRFB31N20DPBF , IRFB3206GPBF , IRFB3206PBF , IRFB3207PBF , IRFB3207ZGPBF .
History: IRFB23N20DPBF | IRFB3077GPBF
Keywords - IRFB3006GPBF MOSFET specs
IRFB3006GPBF cross reference
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IRFB3006GPBF substitution
IRFB3006GPBF replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IRFB23N20DPBF | IRFB3077GPBF
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