IRFB31N20DPBF Datasheet. Specs and Replacement

Type Designator: IRFB31N20DPBF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm

Package: TO-220AB

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IRFB31N20DPBF substitution

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IRFB31N20DPBF datasheet

 ..1. Size:290K  international rectifier
irfb31n20dpbf irfs31n20dp irfsl31n20dp.pdf pdf_icon

IRFB31N20DPBF

IRFB31N20DPbF SMPS MOSFET IRFS31N20DPbF IRFSL31N20DPbF AppIications HEXFET Power MOSFET l High Frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 200V 0.082 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Cur... See More ⇒

 ..2. Size:290K  international rectifier
irfb31n20dpbf irfs31n20dpbf irfsl31n20dpbf.pdf pdf_icon

IRFB31N20DPBF

IRFB31N20DPbF SMPS MOSFET IRFS31N20DPbF IRFSL31N20DPbF AppIications HEXFET Power MOSFET l High Frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 200V 0.082 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Cur... See More ⇒

 4.1. Size:245K  inchange semiconductor
irfb31n20d.pdf pdf_icon

IRFB31N20DPBF

isc N-Channel MOSFET Transistor IRFB31N20D IIRFB31N20D FEATURES Static drain-source on-resistance RDS(on) 82m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒

 9.1. Size:292K  international rectifier
irfb3306gpbf.pdf pdf_icon

IRFB31N20DPBF

PD - 96211 IRFB3306GPbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply l High Speed Power Switching max. 4.2m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 160A ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Rugged... See More ⇒

Detailed specifications: IRFB23N20DPBF, IRFB260NPBF, IRFB3004GPBF, IRFB3004PBF, IRFB3006GPBF, IRFB3006PBF, IRFB3077GPBF, IRFB3077PBF, IRF4905, IRFB3206GPBF, IRFB3206PBF, IRFB3207PBF, IRFB3207ZGPBF, IRFB3207ZPBF, IRFB3306GPBF, IRFB3306PBF, IRFB3307PBF

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