IRFB3607PBF MOSFET: N-Ch, 75V, 80A. Full datasheet with pinout, specifications and replacement transistor list

IRFB3607PBF Datasheet (PDF)

..1. Size:321K international rectifier
irfb3607pbf irfs3607pbf irfsl3607pbf.pdf pdf_icon

PD - 97308CIRFB3607PbFIRFS3607PbFApplicationsIRFSL3607PbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power SupplyDl High Speed Power Switching VDSS 75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.7.34mG max. 9.0mBenefitsID 80ASl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characteriz

6.1. Size:288K international rectifier
irfb3607gpbf.pdf pdf_icon

PD - 96329IRFB3607GPbFApplicationsl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power SupplyDl High Speed Power Switching VDSS 75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.7.34mG max. 9.0mBenefitsID 80ASl Improved Gate, Avalanche and Dynamicdv/dt RuggednessDl Fully Characterized Capacitance andAval

6.2. Size:880K cn minos
irfb3607.pdf pdf_icon

80V N-Channel Power MOSFETDESCRIPTIONThe IRFB3607 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON)ina wide variety of applications.KEY CHARACTERISTICS V = 80V,I = 90ADS DR

6.3. Size:261K inchange semiconductor
irfb3607.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3607FEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =

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