IRFB3806PBF MOSFET Datasheet: N-Ch, 60V, 43A. Full specification with pinout and replacement list

IRFB3806PBF Specs and Replacement

Type Designator: IRFB3806PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 43 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0158 Ohm

Package: TO-220AB

IRFB3806PBF substitution

- MOSFET ⓘ Cross-Reference Search

IRFB3806PBF datasheet

..1. Size:564K international rectifier
irfb3806pbf irfs3806pbf irfsl3806pbf.pdf pdf_icon

PD - 97310 IRFB3806PbF IRFS3806PbF Applications IRFSL3806PbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 60V l Hard Switched and High Frequency Circuits RDS(on) typ. 12.6m G max. 15.8m Benefits ID 43A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully C... See More ⇒

6.1. Size:246K inchange semiconductor
irfb3806.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFB3806 IIRFB3806 FEATURES Static drain-source on-resistance RDS(on) 15.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for High speed power switching and high efficiency synchronous rectification in SMPS AB... See More ⇒

8.1. Size:336K international rectifier
irfb38n20dpbf irfs38n20dpbf.pdf pdf_icon

PD - 97001C IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Applications Key Parameters l High frequency DC-DC converters VDS 200 V l Plasma Display Panel VDS (Avalanche) min. 260 V Benefits RDS(ON) max @ 10V m 54 l Low Gate-to-Drain Charge to TJ max 175 C Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify De... See More ⇒

8.2. Size:583K infineon
irfb38n20dpbf irfs38n20dpbf irfsl38n20dpbf.pdf pdf_icon

IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Key Parameters Applications High frequency DC-DC converters VDS 200 V Plasma Display Panel VDS(Avalanche) min. 260 V RDS(on) max @ 10V 54 m Benefits TJ max 175 C Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS D D D ... See More ⇒