IRFB3806PBF - Даташиты. Аналоги. Основные параметры

PD - 97310IRFB3806PbFIRFS3806PbFApplicationsIRFSL3806PbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power SwitchingDVDSS60Vl Hard Switched and High Frequency CircuitsRDS(on) typ. 12.6mGmax. 15.8mBenefitsID 43ASl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully C

isc N-Channel MOSFET Transistor IRFB3806IIRFB3806FEATURESStatic drain-source on-resistance:RDS(on) 15.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for High speed power switching and high efficiencysynchronous rectification in SMPSAB

PD - 97001CIRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbFHEXFET Power MOSFETApplicationsKey Parametersl High frequency DC-DC convertersVDS200 Vl Plasma Display PanelVDS (Avalanche) min.260 VBenefitsRDS(ON) max @ 10V m54l Low Gate-to-Drain Charge toTJ max175 CReduce Switching Lossesl Fully Characterized CapacitanceIncluding Effective COSS to SimplifyDe

IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Key Parameters Applications High frequency DC-DC converters VDS 200 V Plasma Display Panel VDS(Avalanche) min. 260 VRDS(on) max @ 10V 54 mBenefits TJ max 175 C Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS D D D

isc N-Channel MOSFET Transistor IRFB38N20DIIRFB38N20DFEATURESStatic drain-source on-resistance:RDS(on) 54mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U