All MOSFET. IRFB38N20DPBF Datasheet

 

IRFB38N20DPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFB38N20DPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 43 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
   Package: TO-220AB

 IRFB38N20DPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB38N20DPBF Datasheet (PDF)

 ..1. Size:336K  international rectifier
 irfb38n20dpbf irfs38n20dpbf.pdf

IRFB38N20DPBF IRFB38N20DPBF

PD - 97001CIRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbFHEXFET Power MOSFETApplicationsKey Parametersl High frequency DC-DC convertersVDS200 Vl Plasma Display PanelVDS (Avalanche) min.260 VBenefitsRDS(ON) max @ 10V m54l Low Gate-to-Drain Charge toTJ max175 CReduce Switching Lossesl Fully Characterized CapacitanceIncluding Effective COSS to SimplifyDe

 ..2. Size:583K  infineon
 irfb38n20dpbf irfs38n20dpbf irfsl38n20dpbf.pdf

IRFB38N20DPBF IRFB38N20DPBF

IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Key Parameters Applications High frequency DC-DC converters VDS 200 V Plasma Display Panel VDS(Avalanche) min. 260 VRDS(on) max @ 10V 54 mBenefits TJ max 175 C Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS D D D

 4.1. Size:245K  inchange semiconductor
 irfb38n20d.pdf

IRFB38N20DPBF IRFB38N20DPBF

isc N-Channel MOSFET Transistor IRFB38N20DIIRFB38N20DFEATURESStatic drain-source on-resistance:RDS(on) 54mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

 8.1. Size:564K  international rectifier
 irfb3806pbf irfs3806pbf irfsl3806pbf.pdf

IRFB38N20DPBF IRFB38N20DPBF

PD - 97310IRFB3806PbFIRFS3806PbFApplicationsIRFSL3806PbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power SwitchingDVDSS60Vl Hard Switched and High Frequency CircuitsRDS(on) typ. 12.6mGmax. 15.8mBenefitsID 43ASl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully C

 8.2. Size:564K  infineon
 irfb3806pbf irfs3806pbf irfsl3806pbf.pdf

IRFB38N20DPBF IRFB38N20DPBF

PD - 97310IRFB3806PbFIRFS3806PbFApplicationsIRFSL3806PbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power SwitchingDVDSS60Vl Hard Switched and High Frequency CircuitsRDS(on) typ. 12.6mGmax. 15.8mBenefitsID 43ASl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully C

 8.3. Size:246K  inchange semiconductor
 irfb3806.pdf

IRFB38N20DPBF IRFB38N20DPBF

isc N-Channel MOSFET Transistor IRFB3806IIRFB3806FEATURESStatic drain-source on-resistance:RDS(on) 15.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for High speed power switching and high efficiencysynchronous rectification in SMPSAB

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AP13P15GH-HF | P2003EVT | 6N70KG-TND-R | BUK9620-55A | AMA921P | IRLR7833 | BUK9623-75A

 

 
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