IRFB38N20DPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFB38N20DPBF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 43 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 60 nC
trⓘ - Время нарастания: 60 ns
Cossⓘ - Выходная емкость: 450 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.054 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для IRFB38N20DPBF
IRFB38N20DPBF Datasheet (PDF)
irfb38n20dpbf irfs38n20dpbf.pdf
PD - 97001CIRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbFHEXFET Power MOSFETApplicationsKey Parametersl High frequency DC-DC convertersVDS200 Vl Plasma Display PanelVDS (Avalanche) min.260 VBenefitsRDS(ON) max @ 10V m54l Low Gate-to-Drain Charge toTJ max175 CReduce Switching Lossesl Fully Characterized CapacitanceIncluding Effective COSS to SimplifyDe
irfb38n20dpbf irfs38n20dpbf irfsl38n20dpbf.pdf
IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Key Parameters Applications High frequency DC-DC converters VDS 200 V Plasma Display Panel VDS(Avalanche) min. 260 VRDS(on) max @ 10V 54 mBenefits TJ max 175 C Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS D D D
irfb38n20d.pdf
isc N-Channel MOSFET Transistor IRFB38N20DIIRFB38N20DFEATURESStatic drain-source on-resistance:RDS(on) 54mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
irfb3806pbf irfs3806pbf irfsl3806pbf.pdf
PD - 97310IRFB3806PbFIRFS3806PbFApplicationsIRFSL3806PbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power SwitchingDVDSS60Vl Hard Switched and High Frequency CircuitsRDS(on) typ. 12.6mGmax. 15.8mBenefitsID 43ASl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully C
irfb3806pbf irfs3806pbf irfsl3806pbf.pdf
PD - 97310IRFB3806PbFIRFS3806PbFApplicationsIRFSL3806PbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power SwitchingDVDSS60Vl Hard Switched and High Frequency CircuitsRDS(on) typ. 12.6mGmax. 15.8mBenefitsID 43ASl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully C
irfb3806.pdf
isc N-Channel MOSFET Transistor IRFB3806IIRFB3806FEATURESStatic drain-source on-resistance:RDS(on) 15.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for High speed power switching and high efficiencysynchronous rectification in SMPSAB
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD