All MOSFET. IRFB4110PBF Datasheet

 

IRFB4110PBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFB4110PBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 370 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 150 nC

Rise Time (tr): 67 nS

Drain-Source Capacitance (Cd): 670 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0045 Ohm

Package: TO-220AB

IRFB4110PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB4110PBF Datasheet (PDF)

1.1. irfb4110pbf.pdf Size:237K _upd-mosfet

IRFB4110PBF
IRFB4110PBF

PD - 97061D IRFB4110PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits max. 4.5m ID (Silicon Limited) 180A ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D l

1.2. irfb4110pbf.pdf Size:237K _international_rectifier

IRFB4110PBF
IRFB4110PBF

PD - 97061D IRFB4110PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits max. 4.5m ID (Silicon Limited) 180A ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D l

 2.1. irfb4110gpbf.pdf Size:303K _upd-mosfet

IRFB4110PBF
IRFB4110PBF

PD - 96214 IRFB4110GPbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits max. 4.5m ID (Silicon Limited) 180A ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D l

2.2. irfb4110gpbf.pdf Size:303K _international_rectifier

IRFB4110PBF
IRFB4110PBF

PD - 96214 IRFB4110GPbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits max. 4.5m ID (Silicon Limited) 180A ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D l

 2.3. irfb4110.pdf Size:245K _inchange_semiconductor

IRFB4110PBF
IRFB4110PBF

isc N-Channel MOSFET Transistor IRFB4110,IIRFB4110 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a S

2.4. irfb4110g.pdf Size:245K _inchange_semiconductor

IRFB4110PBF
IRFB4110PBF

isc N-Channel MOSFET Transistor IRFB4110G, IIRFB4110G ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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