All MOSFET. IRFB4110PBF Datasheet

 

IRFB4110PBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFB4110PBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 370 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 150 nC

Rise Time (tr): 67 nS

Drain-Source Capacitance (Cd): 670 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0045 Ohm

Package: TO-220AB

IRFB4110PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB4110PBF Datasheet (PDF)

1.1. irfb4110pbf.pdf Size:237K _upd-mosfet

IRFB4110PBF
IRFB4110PBF

PD - 97061D IRFB4110PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits max. 4.5m ID (Silicon Limited) 180A ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D l

2.1. irfb4110gpbf.pdf Size:303K _upd-mosfet

IRFB4110PBF
IRFB4110PBF

PD - 96214 IRFB4110GPbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits max. 4.5m ID (Silicon Limited) 180A ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D l

 3.1. irfb4115gpbf.pdf Size:312K _upd-mosfet

IRFB4110PBF
IRFB4110PBF

PD - 96216 IRFB4115GPbF HEXFET® Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 9.3mΩ l High Speed Power Switching G max. 11mΩ l Hard Switched and High Frequency Circuits ID (Silicon Limited) 104A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D l Fully Characterize

3.2. irfb4115pbf.pdf Size:231K _upd-mosfet

IRFB4110PBF
IRFB4110PBF

PD - 97354B IRFB4115PbF HEXFET® Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 9.3mΩ l High Speed Power Switching G max. 11mΩ l Hard Switched and High Frequency Circuits ID (Silicon Limited) 104A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Ca

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
Back to Top

 


IRFB4110PBF
  IRFB4110PBF
  IRFB4110PBF
 

social 

LIST

Last Update

MOSFET: BUK637-400B | BUK437-500A | CMI80N06 | CMB80N06 | CMP80N06 | MTY30N50E | 2SK3262-01MR | VN88AF | TK290P60Y | SW069R10VS | SUP70040E | SUD25N15-52-E3 | STP30NF10FP | SKS10N20 | SiHA11N80E |

 

 

 
Back to Top