All MOSFET. IRFB4115PBF Datasheet

 

IRFB4115PBF Datasheet and Replacement


   Type Designator: IRFB4115PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 380 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 104 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 77 nC
   tr ⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO-220AB
 

 IRFB4115PBF substitution

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IRFB4115PBF Datasheet (PDF)

 ..1. Size:336K  international rectifier
 irfb4115pbf.pdf pdf_icon

IRFB4115PBF

IRFB4115PbFHEXFET Power MOSFETApplicationsDVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.9.3ml High Speed Power SwitchingG max. 11ml Hard Switched and High Frequency CircuitsID (Silicon Limited)104ASBenefitsDl Improved Gate, Avalanche and Dynamic dv/dtRuggednessl Fully Characterized Capacita

 6.1. Size:312K  international rectifier
 irfb4115gpbf.pdf pdf_icon

IRFB4115PBF

PD - 96216IRFB4115GPbFHEXFET Power MOSFETApplications DVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.9.3ml High Speed Power SwitchingG max. 11ml Hard Switched and High Frequency CircuitsID (Silicon Limited)104ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness Dl Fully Characterize

 6.2. Size:245K  inchange semiconductor
 irfb4115g.pdf pdf_icon

IRFB4115PBF

isc N-Channel MOSFET Transistor IRFB4115GIIRFB4115GFEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMU

 6.3. Size:245K  inchange semiconductor
 irfb4115.pdf pdf_icon

IRFB4115PBF

isc N-Channel MOSFET Transistor IRFB4115IIRFB4115FEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMUM

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK4089LS | FCD4N60

Keywords - IRFB4115PBF MOSFET datasheet

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