IRFB41N15DPBF Datasheet and Replacement
   Type Designator: IRFB41N15DPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N
 -Channel   
Pd ⓘ
 - Maximum Power Dissipation: 200
 W   
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
 V   
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
 V   
|Id| ⓘ - Maximum Drain Current: 41
 A   
Tj ⓘ - Maximum Junction Temperature: 175
 °C   
tr ⓘ - Rise Time: 63
 nS   
Cossⓘ - 
Output Capacitance: 510
 pF   
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045
 Ohm
		   Package: 
TO-220AB
				
				  
				  IRFB41N15DPBF substitution
   - 
MOSFET ⓘ Cross-Reference Search
 
		
IRFB41N15DPBF Datasheet (PDF)
 ..1.  Size:337K  international rectifier
 irfb41n15dpbf irfib41n15dpbf irfs41n15dpbf.pdf 
 
						 
 
PD - 94927AIRFB41N15DPbFIRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbFApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersl Lead-FreeVDSS RDS(on) max IDBenefits150V 0.045 41Al Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avala
 ..2.  Size:708K  infineon
 irfb41n15dpbf irfib41n15dpbf irfs41n15dpbf irfsl41n15dpbf.pdf 
 
						 
 
IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF HEXFET Power MOSFET Applications  High frequency DC-DC converters VDSS 150V Benefits RDS(on) max 0.045 Low Gate-to-Drain Charge to Reduce Switching Losses ID 41A  Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. D D  Note AN1001)  Fully Characteri
 4.1.  Size:244K  inchange semiconductor
 irfb41n15d.pdf 
 
						 
 
isc N-Channel MOSFET Transistor IRFB41N15DIIRFB41N15DFEATURESStatic drain-source on-resistance:RDS(on) 45mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
 8.1.  Size:392K  international rectifier
 irfb4137pbf.pdf 
 
						 
 
IRFB4137PbF HEXFET Power MOSFET Application  High Efficiency Synchronous Rectification in SMPS DVDSS 300V  Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 56m Hard Switched and High Frequency Circuits G 69mmax SID 38A Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Chara
 8.2.  Size:312K  international rectifier
 irfb4115gpbf.pdf 
 
						 
 
PD - 96216IRFB4115GPbFHEXFET Power MOSFETApplications DVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.9.3ml High Speed Power SwitchingG max. 11ml Hard Switched and High Frequency CircuitsID (Silicon Limited)104ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness Dl Fully Characterize
 8.3.  Size:336K  international rectifier
 irfb4115pbf.pdf 
 
						 
 
IRFB4115PbFHEXFET Power MOSFETApplicationsDVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.9.3ml High Speed Power SwitchingG max. 11ml Hard Switched and High Frequency CircuitsID (Silicon Limited)104ASBenefitsDl Improved Gate, Avalanche and Dynamic dv/dtRuggednessl Fully Characterized Capacita
 8.4.  Size:291K  international rectifier
 irfb4127pbf.pdf 
 
						 
 
PD -97136AIRFB4127PbFHEXFET Power MOSFETApplications DVDSS200Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 17m:l High Speed Power SwitchingGmax. 20m:l Hard Switched and High Frequency CircuitsID 76ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avala
 8.5.  Size:303K  international rectifier
 irfb4110gpbf.pdf 
 
						 
 
PD - 96214IRFB4110GPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply VDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7ml Hard Switched and High Frequency Circuits max. 4.5mID (Silicon Limited)180A ID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessD Dl 
 8.6.  Size:341K  international rectifier
 irfb4110pbf.pdf 
 
						 
 
IRFB4110PbFHEXFET Power MOSFETApplicationsDVDSS 100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply3.7ml High Speed Power Switching max.4.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 180A S ID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtDRuggedness
 8.7.  Size:306K  international rectifier
 irfb4110qpbf.pdf 
 
						 
 
PD - 96138IRFB4110QPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyVDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7ml Hard Switched and High Frequency Circuitsl Lead-Free max4.5mID180ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtDRuggednessDl Fully Characterized Capacitance an
 8.8.  Size:809K  cn evvo
 irfb4110.pdf 
 
						 
 
IRFB4110100 V N-Channel MOSFETApplicationsl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supplyl High Speed Power Switchingl Hard Switched and High Frequency CircuitsBenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessl Fully Characterized Capacitance and AvalancheSOADl Enhanced body diode dV/dt and dI/dt Capabilityl Lead Freel
 8.9.  Size:1046K  cn minos
 irfb4110.pdf 
 
						 
 
100V N-Channel Power MOSFETDESCRIPTIONThe IRFB4110 uses advanced trench technology toprovide excellent R , low gate charge. It can beDS(ON)used in a wide variety of applications.KEY CHARACTERISTICS V = 100V,I = 180A R 
 8.10.  Size:245K  inchange semiconductor
 irfb4115g.pdf 
 
						 
 
isc N-Channel MOSFET Transistor IRFB4115GIIRFB4115GFEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMU
 8.11.  Size:245K  inchange semiconductor
 irfb4110.pdf 
 
						 
 
isc N-Channel MOSFET Transistor IRFB4110IIRFB4110FEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
 8.12.  Size:246K  inchange semiconductor
 irfb4137.pdf 
 
						 
 
isc N-Channel MOSFET Transistor IRFB4137IIRFB4137FEATURESStatic drain-source on-resistance:RDS(on) 69mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMUM 
 8.13.  Size:245K  inchange semiconductor
 irfb4127.pdf 
 
						 
 
isc N-Channel MOSFET Transistor IRFB4127IIRFB4127FEATURESStatic drain-source on-resistance:RDS(on) 20mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMUM 
 8.14.  Size:245K  inchange semiconductor
 irfb4110g.pdf 
 
						 
 
isc N-Channel MOSFET Transistor IRFB4110G IIRFB4110GFEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
 8.15.  Size:245K  inchange semiconductor
 irfb4115.pdf 
 
						 
 
isc N-Channel MOSFET Transistor IRFB4115IIRFB4115FEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMUM 
Datasheet: IRFB4019PBF
, IRFB4020PBF
, IRFB4110GPBF
, IRFB4110PBF
, IRFB4115GPBF
, IRFB4115PBF
, IRFB4127PBF
, IRFB4137PBF
, 2N7002
, IRFB4212PBF
, IRFB4215
, IRFB4215PBF
, IRFB4227PBF
, IRFB4228PBF
, IRFB4229PBF
, IRFB4233PBF
, IRFB42N20DPBF
. 
Keywords - IRFB41N15DPBF MOSFET datasheet
 IRFB41N15DPBF cross reference
 IRFB41N15DPBF equivalent finder
 IRFB41N15DPBF lookup
 IRFB41N15DPBF substitution
 IRFB41N15DPBF replacement