IRLW530A Datasheet. Specs and Replacement

Type Designator: IRLW530A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO263

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IRLW530A datasheet

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IRLW530A

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.12 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.101 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute ... See More ⇒

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IRLW530A

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Detailed specifications: IRLU2703, IRLU2705, IRLU2905, IRLU3103, IRLU3303, IRLU3410, IRLW510A, IRLW520A, IRF540, IRLW540A, IRLW610A, IRLW620A, IRLW630A, IRLW640A, IRLWZ14A, IRLWZ24A, IRLWZ34A

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