All MOSFET. IRFB4610PBF Datasheet

 

IRFB4610PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFB4610PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 190 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 73 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 90 nC
   Rise Time (tr): 87 nS
   Drain-Source Capacitance (Cd): 260 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm
   Package: TO-220AB

 IRFB4610PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB4610PBF Datasheet (PDF)

 ..1. Size:399K  international rectifier
irfb4610pbf irfs4610pbf irfsl4610pbf.pdf

IRFB4610PBF
IRFB4610PBF

PD - 95936CIRFB4610PbFIRFS4610PbFIRFSL4610PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11mRDS(on) typ.l Hard Switched and High Frequency CircuitsG max. 14mID 73ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

 ..2. Size:399K  infineon
irfb4610pbf irfs4610pbf irfsl4610pbf.pdf

IRFB4610PBF
IRFB4610PBF

PD - 95936CIRFB4610PbFIRFS4610PbFIRFSL4610PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11mRDS(on) typ.l Hard Switched and High Frequency CircuitsG max. 14mID 73ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

 6.1. Size:717K  infineon
auirfb4610 auirfs4610.pdf

IRFB4610PBF
IRFB4610PBF

AUIRFB4610 AUTOMOTIVE GRADE AUIRFS4610 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Enhanced dV/dT and dI/dT capability 175C Operating Temperature max. 14m Fast Switching ID 73A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive

 6.2. Size:381K  infineon
irfb4610 irfs4610 irfsl4610.pdf

IRFB4610PBF
IRFB4610PBF

PD - 96906BIRFB4610IRFS4610IRFSL4610ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11m:RDS(on) typ.l Hard Switched and High Frequency CircuitsGmax. 14m:Benefitsl Improved Gate, Avalanche and Dynamic dV/dtID 73ASRuggednessl Fully Characterized Capacita

 6.3. Size:246K  inchange semiconductor
irfb4610.pdf

IRFB4610PBF
IRFB4610PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4610IIRFB4610FEATURESStatic drain-source on-resistance:RDS(on) 14mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF540N , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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