All MOSFET. IRFB4620PBF Datasheet

 

IRFB4620PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFB4620PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 144 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 22.4 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0725 Ohm
   Package: TO-220AB

 IRFB4620PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB4620PBF Datasheet (PDF)

 ..1. Size:288K  international rectifier
irfb4620pbf.pdf

IRFB4620PBF
IRFB4620PBF

PD -96172IRFB4620PbFHEXFET Power MOSFETApplications DVDSS200Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.60ml Uninterruptible Power Supplyl High Speed Power SwitchingG max. 72.5ml Hard Switched and High Frequency CircuitsID 25ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avalanche

 ..2. Size:288K  infineon
irfb4620pbf.pdf

IRFB4620PBF
IRFB4620PBF

PD -96172IRFB4620PbFHEXFET Power MOSFETApplications DVDSS200Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.60ml Uninterruptible Power Supplyl High Speed Power SwitchingG max. 72.5ml Hard Switched and High Frequency CircuitsID 25ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avalanche

 6.1. Size:245K  inchange semiconductor
irfb4620.pdf

IRFB4620PBF
IRFB4620PBF

isc N-Channel MOSFET Transistor IRFB4620IIRFB4620FEATURESStatic drain-source on-resistance:RDS(on) 72.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMU

 8.1. Size:294K  international rectifier
irfb4615pbf.pdf

IRFB4620PBF
IRFB4620PBF

PD -96171IRFB4615PbFHEXFET Power MOSFETApplications DVDSS150Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 32ml High Speed Power SwitchingG max. 39ml Hard Switched and High Frequency CircuitsID 35ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avalanche

 8.2. Size:399K  international rectifier
irfb4610pbf irfs4610pbf irfsl4610pbf.pdf

IRFB4620PBF
IRFB4620PBF

PD - 95936CIRFB4610PbFIRFS4610PbFIRFSL4610PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11mRDS(on) typ.l Hard Switched and High Frequency CircuitsG max. 14mID 73ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

 8.3. Size:717K  infineon
auirfb4610 auirfs4610.pdf

IRFB4620PBF
IRFB4620PBF

AUIRFB4610 AUTOMOTIVE GRADE AUIRFS4610 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Enhanced dV/dT and dI/dT capability 175C Operating Temperature max. 14m Fast Switching ID 73A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive

 8.4. Size:294K  infineon
irfb4615pbf.pdf

IRFB4620PBF
IRFB4620PBF

PD -96171IRFB4615PbFHEXFET Power MOSFETApplications DVDSS150Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 32ml High Speed Power SwitchingG max. 39ml Hard Switched and High Frequency CircuitsID 35ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avalanche

 8.5. Size:399K  infineon
irfb4610pbf irfs4610pbf irfsl4610pbf.pdf

IRFB4620PBF
IRFB4620PBF

PD - 95936CIRFB4610PbFIRFS4610PbFIRFSL4610PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11mRDS(on) typ.l Hard Switched and High Frequency CircuitsG max. 14mID 73ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

 8.6. Size:381K  infineon
irfb4610 irfs4610 irfsl4610.pdf

IRFB4620PBF
IRFB4620PBF

PD - 96906BIRFB4610IRFS4610IRFSL4610ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11m:RDS(on) typ.l Hard Switched and High Frequency CircuitsGmax. 14m:Benefitsl Improved Gate, Avalanche and Dynamic dV/dtID 73ASRuggednessl Fully Characterized Capacita

 8.7. Size:246K  inchange semiconductor
irfb4610.pdf

IRFB4620PBF
IRFB4620PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4610IIRFB4610FEATURESStatic drain-source on-resistance:RDS(on) 14mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 8.8. Size:245K  inchange semiconductor
irfb4615.pdf

IRFB4620PBF
IRFB4620PBF

isc N-Channel MOSFET Transistor IRFB4615IIRFB4615FEATURESStatic drain-source on-resistance:RDS(on) 39mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMUM

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF640N , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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